Journal of Computational Electronics

, Volume 7, Issue 3, pp 176–180 | Cite as

Self-consistent calculation for valence subband structure and hole mobility in p-channel inversion layers

  • Yan Zhang
  • Jiseok Kim
  • M. V. Fischetti


Using six- and eight-band kp models—with parameters calibrated against the bulk band structure obtained using non-local empirical pseudopotentials—we have employed a new hybrid self-consistent method to calculate the valence subband structure in p-channel inversion layers of InAs, InSb, GaAs, In0.53Ga0.47As, and GaSb. This method involves two separate stages: first, density-of-states (DOS) of the three lowest-energy subbands (heavy, light, and split-off holes) is calculated using the triangular-well approximation. Then, the self-consistent calculation is performed using the DOS previously obtained, but shifting each subband by the amount obtained from the self-consistent eigenvalues obtained during the self-consistent iteration. Finally, we present results regarding the hole mobility in Ge p-channel inversion layers. The results are compared to those obtained employing the subband structure computed with the triangular-well approximation and also with experimental data.


Six-band Eight-band kp Self-consistent Valence band III–V p-channels Pseudopotential 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Moglestue, C.: J. Appl. Phys. 59, 3175 (1986) CrossRefGoogle Scholar
  2. 2.
    Bangert, E., Landwehr, G.: Surf. Sci. 58, 138 (1976) CrossRefGoogle Scholar
  3. 3.
    Oberhüber, R., Zandler, G., Vogl, P.: Phys. Rev. B 58, 9941 (1998) CrossRefGoogle Scholar
  4. 4.
    Fischetti, M.V., Ren, Z., et al.: J. Appl. Phys. 94, 1079 (2003) CrossRefGoogle Scholar
  5. 5.
    Dresselhaus, G., Kip, A.F., Kittel, C.: Phys. Rev. 98, 368 (1955) CrossRefGoogle Scholar
  6. 6.
    Ridene, S., Boujdaria, K., et al.: Phys. Rev. B 64, 085329 (2001) CrossRefGoogle Scholar
  7. 7.
    Chelikowsky, J.R., Cohen, M.L.: Phys. Rev. B 14, 556 (1976) CrossRefGoogle Scholar
  8. 8.
    Lee, S.J., Kwon, T.S., Nahm, K., Kim, C.K.: Phys. Condens. Matter 2, 3253 (1990) CrossRefGoogle Scholar
  9. 9.
    Richardson, D., Phys, J.: J. Phys. C: Solid State Phys. 5, L27 (1972) CrossRefGoogle Scholar
  10. 10.
    Vurgaftman, I., Meyer, J.R., et al.: Appl. Phys. Rev. 89, 5815 (2001) CrossRefGoogle Scholar
  11. 11.
    Martens, K., Kaczer, B., et al.: Scientific Report 2006, IMEC 80, 2234 (1996) Google Scholar

Copyright information

© Springer Science+Business Media LLC 2007

Authors and Affiliations

  1. 1.Department of Electrical and Computer EngineeringUniversity of MassachusettsAmherstUSA

Personalised recommendations