Skip to main content
SpringerLink
Log in

Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study

  • Published:
Journal of Computational Electronics Aims and scope Submit manuscript

Abstract

In the last years, different techniques have been proposed to include quantization effects in simulation of electron transport in nanoscale devices. The Effective Potential approach has been demonstrated as a possible correction method for describing these effects in Monte-Carlo device simulation. In this paper we discuss the numerical implementation and the actual ability of this approach to incorporating electrostatic quantum effects in the frame of an existing Monte-Carlo code (MONACO). A new methodology based on a Design-Of-Experiment is proposed for reproducing the Schrödinger-Poisson electron density profile. This original methodology allows to clearly highlight the validity limits of the Effective Potential correction for the description of quantization effects in a double-gate nMOSFET.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. International Technology Roadmap for Semiconductors (2003)

  2. Shifren, L., Ferry, D.K.: Physica B 314, 72–75 (2002)

    Article  Google Scholar 

  3. Kosina, H., Nedjalkov, M., Selberherr, S.: Nanotech 2, 190–193 (2003)

    Google Scholar 

  4. Monsef, F., Dollfus, P., Galdin, S.: JAP 95, 3587–3593 (2004)

    Google Scholar 

  5. Ferry, D.K., Akis, R., Vasileska, D.: IEDM Tech. Dig. 287–290 (2000)

  6. Akis, R., Milicic, S.N., Ferry, D.K., Vasileska, D.: MSM 550–553 (2001)

  7. Watling, J.R., Brown, A.R., Asenov, A., Ferry, D.K.: SISPAD 82–85 (2001)

  8. Li, Y.: IEEE Trans. Nanotechnol. 1, 238–242 (2002)

    Article  Google Scholar 

  9. Palestri, P., Esseni, D., Abramo, A., Clerc, R., Selmi, L.: ESSDERC Tech. Digest 407 (2003)

  10. Tsuchiya, H., Ravaioli, U.: J. Appl. Phys. 89, 4023–4029 (2001)

    Article  Google Scholar 

  11. Tang, T.-W., Wu, B.: Semicond. Sci. Technol. 19, 54–60 (2004)

    Article  Google Scholar 

  12. Winstead, B., Ravaioli, U.: IEEE Trans. Electr. Dev. 50, 440–446 (2003)

    Article  Google Scholar 

  13. Saint Martin, J., Bournel, A., Dollfus, P.: IEEE Trans. Electr. Dev. 51, 1148–1155 (2004)

    Article  Google Scholar 

  14. Press, W.H., Teukolsky, S.A., Wetterling, W.T., Flannery, B.P.: Numerical Recipes in Fortran 77, p. 107. Cambridge University Press (1992)

Download references

Author information

Authors and Affiliations

  1. CEA-LETI/D2NT/LSCDP, F-38054, Grenoble cedex 9, France

    M.-A. Jaud, S. Barraud, F. De Crecy & G. Le Carval

  2. STMicroelectronics, F-38926, Crolles, France

    M.-A. Jaud & H. Jaouen

  3. Institut d’Electronique Fondamentale, CNRS, Université Paris Sud, F-91405, Orsay, France

    M.-A. Jaud & P. Dollfus

Authors
  1. M.-A. Jaud
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. Barraud
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. P. Dollfus
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Jaouen
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. F. De Crecy
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. G. Le Carval
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to M.-A. Jaud.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Jaud, MA., Barraud, S., Dollfus, P. et al. Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study. J Comput Electron 5, 171–175 (2006). https://doi.org/10.1007/s10825-006-8839-9

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10825-006-8839-9

Keywords

Search

Navigation