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EnergyDispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires

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Abstract

We calculate the energy dispersion relations in Si quantum wells (QW), E(k 2D), and quantum wires (QWR), E(k 1D), focusing on the regions with negative effective mass (NEM) in the valence band. The existence of such NEM regions is a necessary condition for the current oscillations in ballistic quasineutral plasma in semiconductor structures. The frequency range of such oscillations can be extended to the terahertz region by scaling down the length of structures. Our analysis shows that silicon is a promising material for prospective NEM-based terahertz wave generators. We also found that comparing to Si QWRs, Si QWs are preferable structures for NEM-based generation in the terahertz range.

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Authors and Affiliations

  1. University at Buffalo, SUNY, 332D Bonner Hall, Buffalo, NY, 14260, USA

    Vladimir Mitin & Nizami Vagidov

  2. Integrated Systems Laboratory, ETH Zurich, 8092, Zurich, Switzerland

    Mathieu Luisier

  3. Network for Computational Nanotechnology, Purdue University, West Lafayette, IN, 47907, USA

    Gerhard Klimeck

Authors
  1. Vladimir Mitin
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  2. Nizami Vagidov
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  3. Mathieu Luisier
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  4. Gerhard Klimeck
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Correspondence to Vladimir Mitin.

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Mitin, V., Vagidov, N., Luisier, M. et al. EnergyDispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires. J Comput Electron 6, 227–230 (2007). https://doi.org/10.1007/s10825-006-0103-9

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  • DOI: https://doi.org/10.1007/s10825-006-0103-9

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