3D Monte-Carlo device simulations using an effective quantum potential including electron-electron interactions
- 56 Downloads
Effective quantum potentials describe the physics of quantum-mechanical electron transport in semiconductors more than the classical Coulomb potential. An effective quantum potential was derived previously for the interaction of an electron with a barrier for use in particle-based Monte Carlo semiconductor device simulators. The method is based on a perturbation theory around thermodynamic equilibrium and leads to an effective potential scheme in which the size of the electron depends upon its energy and which is parameter-free. Here we extend the method to electron-electron interactions and show how the effective quantum potential can be evaluated efficiently in the context of many-body problems. The effective quantum potential was used in a three-dimensional Monte-Carlo device simulator for calculating the electron-electron and electron-barrier interactions. Simulation results for an SOI transistor are presented and illustrate how the effective quantum potential changes the characteristics compared to the classical potential.
KeywordsMonte-Carlo simulation Effective quantum potential Electron-electron interactions
Unable to display preview. Download preview PDF.
- Gardner, C., Ringhofer, C.: Smooth quantum potential for the hydrodynamic model. Phys. Rev. E53, 157 (1996)Google Scholar
- Iafrate, G., et al.: Utilization of quantum distribution functions for ultra-submicron device transport. J. de Physique 42(Colloque C7), 307 (1981)Google Scholar
- Wyatt, R.: Quantum wavepacket dynamics with trajectories: wavefunction synthesis along quantum paths. Chem. Phys. Lett. 313, 189 (1999)Google Scholar