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Global Modeling of high frequency devices

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Abstract

In this work, we utilize the Finite-Difference Time Domain (FDTD) Method coupled to a full-band, Cellular Monte Carlo (CMC) simulator to model the behavior of high-frequency devices. Replacing the quasi-static Poisson solver with a more exact electromagnetic (EM) solver provides a full-wave solution of Maxwell’s equations, resulting in a more accurate model for determining the high-frequency response of microwave transistors.

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Authors and Affiliations

  1. Department of Electrical Engineering, Arizona State University, Tempe, AZ, USA

    J. S. Ayubi-Moak & S. M. Goodnick

  2. Department of Electrical and Computer Engineering, Illinois Institute of Technology, Chicago, IL, USA

    M. Saraniti

Authors
  1. J. S. Ayubi-Moak
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  2. S. M. Goodnick
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  3. M. Saraniti
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Correspondence to J. S. Ayubi-Moak.

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Ayubi-Moak, J.S., Goodnick, S.M. & Saraniti, M. Global Modeling of high frequency devices. J Comput Electron 5, 415–418 (2006). https://doi.org/10.1007/s10825-006-0028-3

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  • DOI: https://doi.org/10.1007/s10825-006-0028-3

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