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Journal of Computational Electronics

, Volume 5, Issue 4, pp 415–418 | Cite as

Global Modeling of high frequency devices

  • J. S. Ayubi-Moak
  • S. M. Goodnick
  • M. Saraniti
Article

Abstract

In this work, we utilize the Finite-Difference Time Domain (FDTD) Method coupled to a full-band, Cellular Monte Carlo (CMC) simulator to model the behavior of high-frequency devices. Replacing the quasi-static Poisson solver with a more exact electromagnetic (EM) solver provides a full-wave solution of Maxwell’s equations, resulting in a more accurate model for determining the high-frequency response of microwave transistors.

Keywords

Global modeling Monte Carlo CMC Full-wave FDTD Particle-based simulator 

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Copyright information

© 2006 2006

Authors and Affiliations

  • J. S. Ayubi-Moak
    • 1
  • S. M. Goodnick
    • 1
  • M. Saraniti
    • 2
  1. 1.Department of Electrical EngineeringArizona State UniversityTempeUSA
  2. 2.Department of Electrical and Computer EngineeringIllinois Institute of TechnologyChicagoUSA

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