Journal of Computational Electronics

, Volume 5, Issue 4, pp 319–322 | Cite as

Design perspective against random dopant fluctuation and process variation for scaling multi-gate devices



Multi-gate devices such as DG (Double Gate), SG (Single Gate) and tri-gate, are extensively examined and expected to be one of the promising device structures beyond bulk MOSFETs. We demonstrate the basic characteristics considering random dopant fluctuation for novel device structures and study the sensitivity against process variations. Moreover, we build a 6T-SRAM cell considering random dopant in the channel and calculate the Static Noise Margin (SNM) directly from hp45 down to hp22.


Random discrete dopant Fluctuation Sensitivity Process variation SRAM SNM Static noise margin 


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Copyright information

© 2006 2006

Authors and Affiliations

  1. 1.Fujitsu Laboratories Ltd.AkirunoJapan

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