Journal of Computational Electronics

, Volume 5, Issue 4, pp 319–322 | Cite as

Design perspective against random dopant fluctuation and process variation for scaling multi-gate devices

  • Yoshio Ashizawa
  • Ryo Tanabe
  • Hideki Oka


Multi-gate devices such as DG (Double Gate), SG (Single Gate) and tri-gate, are extensively examined and expected to be one of the promising device structures beyond bulk MOSFETs. We demonstrate the basic characteristics considering random dopant fluctuation for novel device structures and study the sensitivity against process variations. Moreover, we build a 6T-SRAM cell considering random dopant in the channel and calculate the Static Noise Margin (SNM) directly from hp45 down to hp22.


Random discrete dopant Fluctuation Sensitivity Process variation SRAM SNM Static noise margin 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Sano, N. et al.: Role of Long-Range and Short-Range Coulomb Potentials in Threshold Characteristics under Discrete Dopants in Sub-0.1 μm Si-MOSFETs. IEDM Tech. Dig. 275–278 (2000)Google Scholar
  2. 2.
    Mizuno, T. et al.: New Channel Engineering for Sub-100 nm MOS Devices Considering Both Carrier Velocity Overshoot and Statistical Performance Fluctuations. IEEE Trans. Electron Devices 47, 756–761 (2000)CrossRefGoogle Scholar
  3. 3.
    Xiong, S. et al.: Sensitivity of Double-Gate and FinFET Devices to Process Variations. IEEE Trans. Electron Devices 50, 2255–2261 (2003)CrossRefGoogle Scholar

Copyright information

© 2006 2006

Authors and Affiliations

  1. 1.Fujitsu Laboratories Ltd.AkirunoJapan

Personalised recommendations