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Comprehensive Simulation of Vertical Cavity Surface Emitting Lasers: Inclusion of a Many-Body Gain Model

  • Bernd Witzigmann
  • Manuel Aschwanden
  • Valerio Laino
  • Mathieu Luisier
  • Stefan Odermatt
  • Matthias Streiff
  • Andreas Witzig
  • Paul Royo
  • Dominique Vez
Article

Abstract

This paper describes a comprehensive simulation technique for semiconductor lasers. In particular, a many-body calculation of optical gain for the quantum-well region is integrated into a multi-dimensional electro-opto-thermal simulator. Simulation results of material gain and DC device data of a commercial 850 nm Vertical Cavity Surface Emitting Lasers (VCSEL) are compared to measurements. They illustrate the validity of the approach.

Keywords

laser simulation vertical cavity surface emitting laser many body gain TCAD 

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References

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Copyright information

© Springer Science + Business Media, Inc. 2005

Authors and Affiliations

  • Bernd Witzigmann
    • 1
  • Manuel Aschwanden
    • 1
  • Valerio Laino
    • 1
  • Mathieu Luisier
    • 1
  • Stefan Odermatt
    • 1
  • Matthias Streiff
    • 1
  • Andreas Witzig
    • 2
  • Paul Royo
    • 3
  • Dominique Vez
    • 3
  1. 1.Swiss Federal Institute of Technology ETH ZurichZurichSwitzerland
  2. 2.ISE Integrated Systems EngineeringZurichSwitzerland
  3. 3.Avalon PhotonicsZurichSwitzerland

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