Comprehensive Simulation of Vertical Cavity Surface Emitting Lasers: Inclusion of a Many-Body Gain Model
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This paper describes a comprehensive simulation technique for semiconductor lasers. In particular, a many-body calculation of optical gain for the quantum-well region is integrated into a multi-dimensional electro-opto-thermal simulator. Simulation results of material gain and DC device data of a commercial 850 nm Vertical Cavity Surface Emitting Lasers (VCSEL) are compared to measurements. They illustrate the validity of the approach.
Keywordslaser simulation vertical cavity surface emitting laser many body gain TCAD
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- 3.B. Witzigmann, A. Witzig, and W. Fichtner, “A Multidimensional Laser Simulator for Edge-Emitters Including Quantum Carrier Capture,” IEEE Transactions on Electron Devices, Special Issue, Oct. 2000, Vol. 47, No. 10.Google Scholar