Journal of Computational Electronics

, Volume 3, Issue 3–4, pp 439–442 | Cite as

Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors

  • M. Okamoto
  • N. Mori


We have numerically simulated gate tunneling current in MOS capacitors. Price has demonstrated that the Gamow formulation can be applied to analysis of the escape of electrons from channel into gate in MOSFETs [P.J. Price, Appl. Phys. Lett., 82, 2080 (2003)]. We have integrated the Gamow method into a Schrödinger-Poisson solver for metal-gate and poly-Si-gate n-type MOS capacitors. The numerical results of the tunneling current are then compared with experimental results.


gate tunneling current Gamow method MOSFET 


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Copyright information

© Springer Science + Business Media, Inc. 2004

Authors and Affiliations

  1. 1.Department of Electronic EngineeringOsaka UniversitySuita CityJapan

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