Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors
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We have numerically simulated gate tunneling current in MOS capacitors. Price has demonstrated that the Gamow formulation can be applied to analysis of the escape of electrons from channel into gate in MOSFETs [P.J. Price, Appl. Phys. Lett., 82, 2080 (2003)]. We have integrated the Gamow method into a Schrödinger-Poisson solver for metal-gate and poly-Si-gate n-type MOS capacitors. The numerical results of the tunneling current are then compared with experimental results.
Keywordsgate tunneling current Gamow method MOSFET
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