Analysis of Strained-Si Device including Quantum Effect
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In this paper, we describe the analysis of strained-Si device including quantum effect. We linked the first principle band calculation program to the FUJITSU ensemble full band Monte Carlo simulator FALCON directly, which enables to take in arbitrary biaxial strained-Si band structure easily. And also the quantum effect was implemented by Bohm potential method. We show that the strain effect decreases with scaling to 10 nm gate length regime. However, in the domain which ballistic particle is majority, the effect of strain becomes useful again by the increase of the velocity by strain at the source region. This becomes more remarkable when quantum effect is taken into account.
KeywordsMonte Carlo quantum effect Bohm potential strained-Si ballistic transport
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