Journal of Applied Spectroscopy

, Volume 82, Issue 5, pp 857–860 | Cite as

Photocurrent in Strontium Titanate Films on Silicon Substrates

  • H. Sohrabi Anaraki
  • N. V. Gaponenko
  • V. A. Ivanov

Using the sol-gel method, strontium titanate films were prepared (strontium titanate xerogels) on monocrystalline silicon substrates at 750°C annealing temperature. Nickel upper electrodes were deposited by magnetron sputtering, and the current–voltage characteristics were measured for the prepared structures with two upper electrodes and a Schottky barrier. Significant changes in the current–voltage characteristics were observed after illuminating the diode structure with a halogen lamp characterized by 57 mW/cm2 intensity and 3123°C color temperature of the tungsten filament. For a 65-nm thick strontium titanate film under reverse bias voltage of –3 V the photocurrent is 80 μA, whereas without illumination the reverse current is close to zero. Under direct illumination and a voltage of 3 V the photocurrent is 190 μA, while without illumination the current does not exceed 22.5 μA.


sol-gel method strontium titanate photocurrent 


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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • H. Sohrabi Anaraki
    • 1
  • N. V. Gaponenko
    • 1
  • V. A. Ivanov
    • 2
  1. 1.Belarusian State University of Informatics and RadioelectronicsMinskBelarus
  2. 2.Scientific and Practical Materials Research CenterNational Academy of Sciences of BelarusMinskBelarus

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