Using the sol-gel method, strontium titanate films were prepared (strontium titanate xerogels) on monocrystalline silicon substrates at 750°C annealing temperature. Nickel upper electrodes were deposited by magnetron sputtering, and the current–voltage characteristics were measured for the prepared structures with two upper electrodes and a Schottky barrier. Significant changes in the current–voltage characteristics were observed after illuminating the diode structure with a halogen lamp characterized by 57 mW/cm2 intensity and 3123°C color temperature of the tungsten filament. For a 65-nm thick strontium titanate film under reverse bias voltage of –3 V the photocurrent is 80 μA, whereas without illumination the reverse current is close to zero. Under direct illumination and a voltage of 3 V the photocurrent is 190 μA, while without illumination the current does not exceed 22.5 μA.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
L. Mechin, G. J. Gerritsma, and J. Garcia Lopez, Physica C, 324, 47–56 (1999).
S. Baba, K. Numata, and S. Miyake, Sci. Technol. Adv. Mater., 1, 211–217 (2000).
C. Bruce, R. R. Castell, and M. R. Castell, J. Phys. Chem. C, 112, 6538–6545 (2008).
K. Fukushima and S. Shibagaki, Thin Solid Films, 315, 238–243 (1998).
A. M. Kaiser, A. X. Gray, G. Conti, B. Jalan, A. P. Kajdos, A. Gloskovskii, S. Ueda, Y. Yamashita, K. Kobayashi, W. Drube, S. Stemmer, and C. S. Fadley, Appl. Phys. Lett., 100, 261603(1–4) (2012).
C. Wontae, S. W. Kirchoefer, J. M. Pond, J. A. Bellotti, and S. B. Qadri, J. Appl. Phys., 96, No. 11, 6629–6633 (2004).
T. M. Im, J. Y. Park, H. J. Kim, H. K. Choi, K. W. Jung, and D. Jung, Bull. Korean Chem. Soc., 29, 427–430 (2008).
K. Katsumata, T. Shichi, and A. Fujishima, Ceram. Soc. Jpn., 118, 43–47 (2010).
S. Fuentes, R. A. Zarate, E. Chavez, P. Munoz, D. Diaz-Droguett, and P. Leyton, J. Mater. Sci., 45, 1448–1452 (2010).
W. Hofman, S. Hoffmann, and R. Waster, Thin Solid Films, 305, 66–73 (1997).
F. M. Pontes, E. R. Leite, E. J. H. Lee, E. Longo, and J. A. Varela, J. Europ. Ceram. Soc., 21, 419–426 (2001).
S. Hirose, A. Nakayama, H. Niimi, K. Kageyama, and H. Takagi, J. Appl. Phys., 104, 053712(1–12) (2008).
M. H. Tang, Z. P. Wang, J. C. Li, Z. Q. Zeng, X. L. Xu, G. Y. Wang, L. B. Zhang, Y. G. Xiao, S. B. Yang, B. Jiang, and J. He, Semicond. Sci. Technol., 26, 075019 (2011).
D. Fernandez-Hevia, J. de Frutos, A. C. Caballero, and J. F. Fernandez, J. Appl. Phys., 92, 2890–2898 (2002).
M. C. Tarun, F. A. Selim, and M. D. McCluskey, Phys. Rev. Lett., 111, 187403 (2013).
L. Wang, K. Jin, J. Xing, C. Ge, H. Lu, W. Zhou, and G. Yang, Appl. Opt., 52, 3473–3476 (2013).
H. Sohrabi Anaraki, N. V. Gaponenko, M. V. Rudenko, A. F. Guk, S. M Zavadskij, D. A. Golosov, B. S. Kolosnitsyn, V. V. Kolos, A. N. Pyatlitskij, and A. S. Turtsevich, Semiconductors, 48, No. 12, 1685–1687 (2014).
D. Kan, T. Terashima, R. Kanda, A. Masuno, K. Tanaka, S. Chu, H. Kan, A. Ishizumi, Y. Kanemitsu, Y. Shimakawa, and M. Takano, Nature Mater., 4, 816–819 (2005).
D. Choi, D. Lee, H. Sim, M. Chang, and H. Hwang, Appl. Phys. Lett., 88, 082904(1–3) (2006).
M. C. Ni, S. M. Guo, H. F. Tian, Y. G. Zhao, and J. Q. Li, Appl. Phys. Lett., 91, 183502(1–3) (2007).
T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura, Appl. Phys. Lett., 86, 012107(1–3) (2005).
T. Fujii, M. Kawasaki, A. Sawa, Y. Kawazoe, H. Akoh, and Y. Tokura, Phys. Rev. B, 75, 165101(1–7) (2007).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 82, No. 5, pp. 800–803, September–October, 2015.
Rights and permissions
About this article
Cite this article
Anaraki, H.S., Gaponenko, N.V. & Ivanov, V.A. Photocurrent in Strontium Titanate Films on Silicon Substrates. J Appl Spectrosc 82, 857–860 (2015). https://doi.org/10.1007/s10812-015-0194-9
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10812-015-0194-9