Luminescence and Lasing in ZnSe Micropowders at High Optical Excitation Levels
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Photoluminescence (PL) of ZnSe wide-bandgap semiconductor micropowder was studied at a high optical excitation level by pulsed nanosecond N2-laser emission. A new emission band that appeared on the long-wavelength edge of the PL spectrum at 40–75 meV from the electron–hole plasma (EHP) band depending on the optical excitation level showed that plasmons could participate in recombination processes in the EHP. Random lasing at 475 nm from submicron-sized crystallites in ZnSe powder was produced by the third harmonic of a YAG:Nd3+ laser with an exciting-radiation threshold intensity of 750 kW/cm2. The lasing manifested as a sharp increase of integrated emission intensity, a narrowing of the spectrum, and the appearance in it of localized and extended mode structure. Random lasing was due to feedback of amplified radiation in closely packed active scattering microcrystallites.
Keywordswide bandgap semiconductor ZnSe micropowder electron–hole plasma plasmon random lasing
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