Structural and Luminescent Properties of Sn-Doped SiO2 Layers
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The formation of tin nanocrystallites in a SiO2:Sn matrix using a high-dose implantation technique followed by high-temperature processing was studied. Structural phase transformations were studied by plan-view transmission electron microscopy. Optical properties of the implanted samples were investigated by photoluminescence. It was shown that annealing of the implanted SiO2 layers formed nanoprecipitates of β-Sn and caused the appearance of regions enriched in SnO2. Photoluminescence spectra of implanted and annealed samples exhibited intense emission in photon energy range 1.3–3.6 eV that was attributed to oxygen-deficit centers created in the SiO2:Sn matrix and at the nanocluster/SiO2 interface.
KeywordsSiO2:Si structure Sn ion implantation high-temperature processing nanoclusters visible luminescence
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