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Journal of Applied Spectroscopy

, Volume 80, Issue 1, pp 117–123 | Cite as

Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes

  • V. P. Veleschuk
  • A. I. Vlasenko
  • M. P. Kisselyuk
  • O. V. Lyashenko
Article

Microplasma breakdown luminescence of InGaN/GaN heterostructures in different types of high-power light emitting diodes is studied. It is shown that the spectrum of the breakdown luminescence, the luminescence onset voltage, the current in the first microplasma, and the number of microplasmas for a fixed voltage all correlate with the density of critical extended defects, the luminous flux, and the uniformity of current flow, and are determined by the type of substrate (Si, SiC, Al2O3).

Keywords

microplasma breakdown InGaN/GaN heterostructure 

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • V. P. Veleschuk
    • 1
  • A. I. Vlasenko
    • 1
  • M. P. Kisselyuk
    • 1
  • O. V. Lyashenko
    • 2
  1. 1.V. E. Lashkaryov Institute of Semiconductor PhysicsNational Academy of Sciences of UkraineKyivUkraine
  2. 2.Taras Shevchenko Kyiv National UniversityKyivUkraine

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