Journal of Applied Spectroscopy

, Volume 75, Issue 2, pp 203–207 | Cite as

Paramagnetic properties of single-crystal silicon implanted with iron-group transition metals

  • A. P. Dostanko
  • A. O. Korobko
  • N. M. Lapchuk


Samples of single-crystal silicon implanted with iron-group ions are investigated by electron paramagnetic resonance (EPR). The change in relative permittivity μr of the silicon layer modified by implanted nickel ions is found. The accumulation kinetics of paramagnetic centers of amorphous regions of silicon implanted with Co, Ni, and Fe are shown to be different. Magnetic hysteresis for both the wide EPR line due to implanted impurities and the EPR line due to dangling chemical silicon bonds is found.

Key words

EPR spectroscopy silicon iron-group ions hysteresis 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    C. J. Choi, S. Y. Chang, Y. W. Ok, T. Y. Seong, H. Gan, and G. Z. Pan, J. Elect. Mater., 32, No. 10, 1072–1078 (2003).CrossRefADSGoogle Scholar
  2. 2.
    M. A. Harry, G. Curello, M. S. Finney, K. J. Reeson, and B. J. Sealy, J. Phys. D: Appl. Phys., 29, 1822–1830 (1996).CrossRefADSGoogle Scholar
  3. 3.
    B. Y. Choi, SMDL annual report (2003).Google Scholar
  4. 4.
    A. P. Dostanko, V. V. Baranov, and V. V. Shatalov, Current-Carrying Film Systems [in Russian], SBIS, Vysh. Shkola, Minsk (1989).Google Scholar
  5. 5.
    S. P. Murarka, Silicides for VLSI Applications, Academic Press, New York (1983).Google Scholar
  6. 6.
    A. A. Istratov, H. Hieslmair, and E. R. Weber, Appl. Phys. A, 69, 13–44 (1999).CrossRefADSGoogle Scholar
  7. 7.
    S. I. Rembeza, Paramagnetic Resonance in Semiconductors [in Russian], Metallurgiya, Moscow (1988).Google Scholar
  8. 8.
    D. Van der Marel, A. Damaschelli, K. Schulte, and A. A. Menovsky, Physica, B, 244, 138–147 (1998).CrossRefADSGoogle Scholar
  9. 9.
    L. S. Vlasenko, N. T. Son, A. B. van Oosten, C. A. J. Ammerlaan, A. A. Lebedev, E. S. Taptygov, and V. A. Khramtsov, Solid State Commun., 73, No. 10, 393–398 (1990).CrossRefADSGoogle Scholar
  10. 10.
    R. M. Bayazitov, R. I. Batalov, E. I. Terukov, and V. Kh. Kudoyarova, Fiz. Tverd. Tela, 43, No. 9, 1569–1572 (2001).Google Scholar
  11. 11.
    J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, Pergamon, New York (1985).Google Scholar
  12. 12.
    A. A. Bugai, I. M. Zaritskii, S. N. Lukin, E. N. Neimark, and N. N. Kabdin, Fiz. Tekh. Poluprovodn., 23, No. 5, 872–874 (1989).Google Scholar
  13. 13.
    N. A. Poklonskii, T. M. Lapchuk, and A. O. Korobko, in: Abstracts of Papers of the International Conference for the 40th Anniversary of IFTTP, Natl. Acad. Sci. Belarus, and the 90th Birthday of its Founder Acad. N. N. Sirota, “Critical problems in solid-state physics,” November 4–6, 2003, Minsk, Izd. Tsentr BGU, (2003), 44.Google Scholar
  14. 14.
    Yu. I. Golovin and R. B. Morgunov, Zh. Éksp. Teor. Fiz., 115, 605–624 (1999).Google Scholar
  15. 15.
    Yu. I. Golovin, R. B. Morgunov, A. A. Baskakov, M. V. Badylevich, and S. Z. Shmurak, Pis’ma Zh. Éksp. Teor. Fiz., 69, 114–118 (1999).Google Scholar
  16. 16.
    A. L. Buchachenko, R. Z. Sagdeev, and K. Z. Salikhov, Magnetic and Spin Effects in Chemical Reactions [in Russian], Nauka, Novosibirsk (1978).Google Scholar
  17. 17.
    N. A. Poklonskii, A. O. Korobko, and N. M. Lapchuk, in: Proceedings of the XVIth International Conference “Solid-State Radiation Physics,” Sevastopol’, July 3–8, 2006, Moscow, GNU “NII PMT,” (2006), 160–166.Google Scholar
  18. 18.
    N. A. Poklonski, N. M. Lapchuk, and A. O. Korobko, Semiconductors, 40, No. 10, 1151–1154 (2006).CrossRefADSGoogle Scholar

Copyright information

© Springer Science+Business Media, Inc. 2008

Authors and Affiliations

  • A. P. Dostanko
    • 1
  • A. O. Korobko
    • 1
  • N. M. Lapchuk
    • 2
  1. 1.Belarusian State University of Informatics and RadioelectronicsMinskBelarus
  2. 2.Belarusian State UniversityMinskBelarus

Personalised recommendations