Effect of isoelectronic impurities K+ and I− on luminescence of CsBr:Eu2+ crystals
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We have investigated the photoluminescence (PL) and photostimulated luminescence (PSL) spectra at 300 K to study the effect of isoelectronic impurities K+ and I− on the formation and energy structure of Eu2+-VCs isolated dipole centers and aggregate centers in the form of single crystals of CsEuBr3 in CsBr:Eu2+ single crystals. We have shown that K+ and I− impurities in a concentration of 5 mol% do not have a substantial effect on the energy spectrum of isolated dipole centers in CsBr:Eu2+ single crystals and the processes for the formation of such centers during growth of CsBr:Eu single crystals from the melt by the Bridgman method. We have established that in Cs0.95K0.05Br:Eu2+, more favorable conditions are realized for the formation of aggregate centers than in CsBr:Eu2+ and CsBr0.95K0.05Br:Eu2+ single crystals. So in order to improve the storage properties of phosphors based on CsBr:Eu2+, in particular for increasing the efficiency of PSL excitation, it is expedient to dope them with K+ impurity in a concentration up to 5 mol%.
Key wordsstorage phosphors luminescence CsBr:Eu2+ K+ and I− aggregate center
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