Gas flow activated in an electron-beam plasma
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Probe measurements of electron temperature and density, electron energy distribution functions, and plasma potential in a free gas jet activated in an electron-beam plasma and in a planar reactor are presented. The measurements are performed by single, double, and triple electrostatic probes in jets of helium-argon and helium-argon-monosilane gas mixtures. The latter mixture is used to deposit films of microcrystalline and epitaxial silicon. Microcrystalline silicon films of higher quality are obtained in a dense (ne ≈ 1017 m−3) and cold (Te ≈ 1.0–0.5 eV) plasma with a low potential (Usp ≈ 10 V), whereas the growth of monocrystalline silicon films requires a hotter plasma (Te ≈ 3–5 eV) with a potential Usp ≈ 15 V.
Key wordsprobe diagnostics electron-beam plasma chemical vapor deposition of thin silicon films
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