Abstract
Probe measurements of electron temperature and density, electron energy distribution functions, and plasma potential in a free gas jet activated in an electron-beam plasma and in a planar reactor are presented. The measurements are performed by single, double, and triple electrostatic probes in jets of helium-argon and helium-argon-monosilane gas mixtures. The latter mixture is used to deposit films of microcrystalline and epitaxial silicon. Microcrystalline silicon films of higher quality are obtained in a dense (ne ≈ 1017 m−3) and cold (Te ≈ 1.0–0.5 eV) plasma with a low potential (Usp ≈ 10 V), whereas the growth of monocrystalline silicon films requires a hotter plasma (Te ≈ 3–5 eV) with a potential Usp ≈ 15 V.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
K. L. Choy, “Chemical vapour deposition of coatings,” Prog. Mater. Sci., 48, No. 2, 57–170 (2003).
A. Ito, R. Miyano, R. Kitada, et al., “Production of high-density plasmas in electron-beam-excited plasma device,” Jpn. J. Appl. Phys, Pt. 1, 33, No. 7B, 4239–4242 (1994).
J. K. Rath, “Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications,” Solar Energ. Mater. Solar Cells, 76, No. 4, 431–487 (2003).
R. G. Sharafutdinov, S. Ya. Khmel, V. G. Shchukin, et al., “Gas-jet electron beam plasma chemical vapor deposition method for solar cell application,” Solar Energ. Mater. Solar Cells, 89, Nos. 2/3, 99–111 (2005).
M. Imaizumi, K. Okitsu, M. Yamaguchi, et al., “Growth of microcrystalline silicon film by electron beam excited plasma chemical vapor deposition without hydrogen dilution,” J. Vac. Sci. Technol., Ser. A, 16, No. 5, 3134–3137 (1998).
R. Huddelstone and S. Leonard (eds.), Plasma Diagnostic Techniques, New York (1967).
Yu. A. Ivanov, Yu. A. Lebedev, and L. S. Polak, Contact Diagnostic Methods in Nonequilibrium Plasma Chemistry [in Russian], Nauka, Moscow (1981).
V. M. Zalkind, O. S. Pavlichenko, and V. P. Tarasenko, “Measuring the electron temperature in a plasma by a triple electric probe,” Vopr. Atom. Nauki Tekh., Ser. Fiz. Plazmy Probl. UTR, No. 2, 69 (1975).
S. Tada, S. Takashima, M. Ito, et al., “Investigation of nitrogen atoms in low-pressure nitrogen plasmas using a compact electron-beam-excited plasma source,” Jpn. J. Appl. Phys., Pt. 1, 41, No. 7A, 4691–4695 (2002).
D. D. Blackwell, S. G. Walton, D. Leonhardt, et al., “Probe diagnostic development for electron beam produced plasmas,” J. Vac. Sci. Technol., Ser. A, 19, Part 1, No. 4, 1330–1335 (2001).
C. Rosenblad, H. R. Deller, A. Dommann, et al., “Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition,” J. Vac. Sci. Technol., Ser. A, 16, No. 5, 2785–2790 (1998).
Q. Lin, X. Lin, Y. Yu, et al., “Measurements in silane radio frequency glow discharges using a tuned and heated Langmuir probe,” J. Appl. Phys., 74, No. 8, 4899–4902 (1993).
R. G. Sharafutdinov, V. M. Karsten, A. A. Polisan, et al., “Method for carrying out homogeneous and heterogeneous chemical reactions using plasma,” Patent No. AU2002332200, IC WO 03068383, Publ. 08.21.2003.
S. Tada, S. Takashima, M. Ito, et al., “Measurement and control of absolute nitrogen atom density in an electron-beam-excited plasma using vacuum ultraviolet absorption spectroscopy,” J. Appl. Phys., 88, No. 4, 1756–1759 (2000).
R. G. Sharafutdinov, V. M. Karsten, S. Ya. Khmel, et al., “Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD,” Surface Coat. Technol., 174/175, 1178–1181 (2003).
Author information
Authors and Affiliations
Additional information
__________
Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, Vol. 48, No. 1, pp. 3–10, January–February, 2007.
Rights and permissions
About this article
Cite this article
Konstantinov, V.O., Khmel, S.Y. Gas flow activated in an electron-beam plasma. J Appl Mech Tech Phys 48, 1–6 (2007). https://doi.org/10.1007/s10808-007-0001-3
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/s10808-007-0001-3