Gas flow activated in an electron-beam plasma
Probe measurements of electron temperature and density, electron energy distribution functions, and plasma potential in a free gas jet activated in an electron-beam plasma and in a planar reactor are presented. The measurements are performed by single, double, and triple electrostatic probes in jets of helium-argon and helium-argon-monosilane gas mixtures. The latter mixture is used to deposit films of microcrystalline and epitaxial silicon. Microcrystalline silicon films of higher quality are obtained in a dense (ne ≈ 1017 m−3) and cold (Te ≈ 1.0–0.5 eV) plasma with a low potential (Usp ≈ 10 V), whereas the growth of monocrystalline silicon films requires a hotter plasma (Te ≈ 3–5 eV) with a potential Usp ≈ 15 V.
Key wordsprobe diagnostics electron-beam plasma chemical vapor deposition of thin silicon films
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- 6.R. Huddelstone and S. Leonard (eds.), Plasma Diagnostic Techniques, New York (1967).Google Scholar
- 7.Yu. A. Ivanov, Yu. A. Lebedev, and L. S. Polak, Contact Diagnostic Methods in Nonequilibrium Plasma Chemistry [in Russian], Nauka, Moscow (1981).Google Scholar
- 8.V. M. Zalkind, O. S. Pavlichenko, and V. P. Tarasenko, “Measuring the electron temperature in a plasma by a triple electric probe,” Vopr. Atom. Nauki Tekh., Ser. Fiz. Plazmy Probl. UTR, No. 2, 69 (1975).Google Scholar
- 13.R. G. Sharafutdinov, V. M. Karsten, A. A. Polisan, et al., “Method for carrying out homogeneous and heterogeneous chemical reactions using plasma,” Patent No. AU2002332200, IC WO 03068383, Publ. 08.21.2003.Google Scholar