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Inorganic Materials

, Volume 41, Issue 12, pp 1266–1269 | Cite as

Doping of Cadmium Telluride with Germanium, Tin, and Lead

  • P. N. Gorlei
  • O. A. Parfenyuk
  • M. I. Ilashchuk
  • I. V. Nikolaevich
Article

Abstract

The transition of Ge-, Sn-, and Pb-doped CdTe crystals to semi-insulating behavior is analyzed in terms of a charge compensation model which includes shallow donor and acceptor states and defects with midgap energy levels. Model predictions are compared with experimental resistivity data for different doping levels. The deep levels are assumed to be due to dopant atoms. The results indicate that deep stoichiometric defects (V Cd and TeCd) have an insignificant effect on the electrical properties of the material.

Keywords

Cadmium Germanium Deep Level Doping Level Resistivity Data 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© MAIK "Nauka/Interperiodica" 2005

Authors and Affiliations

  • P. N. Gorlei
    • 1
  • O. A. Parfenyuk
    • 1
  • M. I. Ilashchuk
    • 1
  • I. V. Nikolaevich
    • 1
  1. 1.Fed'kovich National UniversityChernovtsyUkraine

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