Inorganic Materials

, Volume 41, Issue 12, pp 1266–1269 | Cite as

Doping of Cadmium Telluride with Germanium, Tin, and Lead

  • P. N. Gorlei
  • O. A. Parfenyuk
  • M. I. Ilashchuk
  • I. V. Nikolaevich


The transition of Ge-, Sn-, and Pb-doped CdTe crystals to semi-insulating behavior is analyzed in terms of a charge compensation model which includes shallow donor and acceptor states and defects with midgap energy levels. Model predictions are compared with experimental resistivity data for different doping levels. The deep levels are assumed to be due to dopant atoms. The results indicate that deep stoichiometric defects (V Cd and TeCd) have an insignificant effect on the electrical properties of the material.


Cadmium Germanium Deep Level Doping Level Resistivity Data 
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Copyright information

© MAIK "Nauka/Interperiodica" 2005

Authors and Affiliations

  • P. N. Gorlei
    • 1
  • O. A. Parfenyuk
    • 1
  • M. I. Ilashchuk
    • 1
  • I. V. Nikolaevich
    • 1
  1. 1.Fed'kovich National UniversityChernovtsyUkraine

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