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Inorganic Materials

, Volume 41, Issue 3, pp 239–242 | Cite as

Deposition of cubic silicon carbide thin films via thermal decomposition of methyltrichlorosilane in hydrogen

  • L. M. Ivanova
  • P. A. Aleksandrov
  • K. D. Demakov
  • V. A. Starostin
  • S. G. Shemardov
Article

Abstract

The conditions for vapor-phase growth of thin SiC films on silicon substrates are optimized. The thickness of the grown films varies from 100 Å to 10 µm, depending on the deposition conditions. The 3C-SiC films grown under the optimal conditions are highly homogeneous, have mirror-smooth surfaces, and adhere well to the substrate.

Keywords

Hydrogen Silicon Thin Film Carbide Inorganic Chemistry 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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REFERENCES

  1. 1.
    Miyajima, T., Sasaki, K., and Furukawa, S., Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method, Springer Proc. Phys., 1992, vol. 71, pp. 281–286.Google Scholar
  2. 2.
    Shimizu, H., Naito, K., and Ishio, S., AC Plasma-Assisted Chemical Vapor Deposition of Cubic Silicon Carbide on Silicon Substrate, Springer Proc. Phys., 1992, vol. 71, pp. 119–125.Google Scholar
  3. 3.
    Fukazawa, T., Sasaki, K., and Furukawa, S., Preparation of Microcrystalline Silicon Carbide Thin Films for the Emitter of Si HBTs, Proc. 2nd Int. Conf. on Amorphous and Crystalline Silicon Carbide, Santa Clara, 1988, pp. 49–53.Google Scholar
  4. 4.
    Kamimura, K., Nishibe, Y., and Onuma, Y., SiC/Si HBT Using Polycrystalline SiC Layers Prepared by Electron Beam Evaporation, Proc. 2nd Int. Conf. on Amorphous and Crystalline Silicon Carbide, Santa Clara, 1988, pp. 207–210.Google Scholar
  5. 5.
    Chinone, Y., Ezaki, S., Fujita, F., and Matsumoto, K., Applications of High Purity SiC Prepared by Chemical Vapor Deposition, Proc. 2nd Int. Conf. on Amorphous and Crystalline Silicon Carbide, Santa Clara, 1988, pp. 198–206.Google Scholar
  6. 6.
    Nishikuni, M., Dohjoh, H., Ninomiya, K., et al., High-Quality Microcrystalline SiC Films Fabricated by the Controlled Plasma Magnetron Method, Proc. 2nd Int. Conf. on Amorphous and Crystalline Silicon Carbide, Santa Clara, 1988, pp. 54–59.Google Scholar
  7. 7.
    Kamimura, K., Koike, K., Ono, H., et al., Polycrystalline SiC Films Prepared by a Plasma Assisted Method at Temperatures Lower Than 1000°C, Proc. 4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV–IV Materials, Santa Clara, 1991, part III, pp. 259–265.Google Scholar
  8. 8.
    Onuma, Y., Okada, P., Ono, H., and Kamimura, K., Preparation of Polycrystalline SiC Thin Films by a Reactive Sputtering Process, Proc. 5th Conf. on Silicon Carbide and Related Materials, Washington, DC, 1993, pp. 133–136.Google Scholar
  9. 9.
    Steckl, A.J., Devrajan, J., Madapura, S., and Chen, J., SiC Thin Film Growth on Si: Mechanisms and Application, 12th Int. Conf. on Crystal Growth-10th Int. Conf. on Vapor Growth and Epitaxy, Jerusalem, 1998, p. 36.Google Scholar
  10. 10.
    Heinrich, J., Hemeltjen, S., and Marx, G., Analytics of CVD Processes in the Deposition of SiC by Methyltrichlorosilane, Microchim. Acta, 2000, vol. 133, pp. 209–214.Google Scholar
  11. 11.
    Ivanova, L.M. and Pletyushkin, A.A., Thermal Decomposition of Methyltrichlorosilane Vapor, Izv. Akad. Nauk SSSR, Neorg. Mater., 1968, vol. 4, no.7, pp. 1089–1093.Google Scholar
  12. 12.
    Akimchenko, I.P., Ivanova, L.M., Pletyushkin, A.A., et al., Preparation and Properties of β-SiC Layers on Silicon and Quartz Substrates, Izv. Akad. Nauk SSSR, Neorg. Mater., 1986, vol. 22, no.6, pp. 955–959.Google Scholar
  13. 13.
    Saidov, M.S., Shamuratov, Kh.A., Mirtalipov, M., and Umurzakov, A., Crystal Growth and Some Properties of Cubic Silicon Carbide, in Karbid kremniya (Silicon Carbide), Tashkent: Fan, 1977, pp. 14–21.Google Scholar
  14. 14.
    Berezhinskii, L.I., Vlaskina, S.I., Rodionov, V.E., and Shamuratov, Kh.A., Cubic Silicon Carbide Films on Silicon Substrates, Pis’ma Zh. Tekh. Fiz., 1989, vol. 15, no.2, pp. 44–48.Google Scholar
  15. 15.
    Ivanova, L.M., Kazaryan, G.A., and Pletyushkin, A.A., Preparation of Silicon Carbide via Thermal Decomposition of Methyltrichlorosilane Vapor, Izv. Akad. Nauk SSSR, Neorg. Mater., 1968, vol. 2, no.2, pp. 223–228.Google Scholar
  16. 16.
    Ivanova, L.M. and Pletyushkin, A.A., Preparation of Polycrystalline Silicon Carbide via Thermal Decomposition of Methyltrichlorosilane, in Karbid kremniya (Silicon Carbide), Kiev: Naukova Dumka, 1966, pp. 151–158.Google Scholar
  17. 17.
    Novikova, S.N., Teplovoe rasshirenie tverdykh tel (Thermal Expansion of Solids), Moscow: Nauka, 1974.Google Scholar

Copyright information

© MAIK “Nauka/Interperiodica” 2005

Authors and Affiliations

  • L. M. Ivanova
    • 1
  • P. A. Aleksandrov
    • 1
  • K. D. Demakov
    • 1
  • V. A. Starostin
    • 1
  • S. G. Shemardov
    • 1
  1. 1.Kurchatov Institute Russian Research CenterMoscowRussia

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