Abstract
A three-layer theoretical model is developed for the characterization of the electronic transport properties (lifetime τ, diffusion coefficient D, and surface recombination velocity s) with energetic particle irradiation on solar cells using non-contact photocarrier radiometry. Monte Carlo (MC) simulation is carried out to obtain the depth profiles of the proton irradiation layer at different low energies (< 200 keV). The monocrystalline silicon (c-Si) solar cells are investigated under different low-energy proton irradiation, and the carrier transport parameters of the three layers are obtained by best-fitting of the experimental results. The results show that the low-energy protons have little influence on the transport parameters of the non-irradiated layer, but high influences on both of the p and n-region irradiation layers which are consisted of MC simulation.
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Acknowledgments
This work was supported by the Foundation for Innovative Research Groups of the National Nature Science Foundation of China under Grant No. 51521003, the Chinese National Natural Science Foundation under Contract Nos. 61571153, 51173034, Self-planned Task of State Key Laboratory of Robotics and System (HIT) and the Program of Introducing Talents of Discipline of Universities (Grant No. B07108).
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Oliullah, M., Liu, J.Y., Song, P. et al. Photocarrier Radiometry for Non-contact Evaluation of Monocrystalline Silicon Solar Cell Under Low-Energy (< 200 keV) Proton Irradiation. Int J Thermophys 39, 74 (2018). https://doi.org/10.1007/s10765-018-2395-y
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DOI: https://doi.org/10.1007/s10765-018-2395-y