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Photocarrier Radiometry for Noncontact Evaluation of Monocrystalline Silicon (c-Si) Solar Cell Irradiated by 1 MeV Electron Beams

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Abstract

In this paper, the monocrystalline silicon (c-Si) solar cell irradiated by 1 MeV electron beams was investigated using noncontact photocarrier radiometry (PCR). A theoretical 1D two-layer PCR model including the impedance effect of the p-n junction was used to characterize the transport properties (carrier lifetime, diffusion coefficient, and surface recombination velocities) of c-Si solar cells irradiated by 1 MeV electron beams with different fluences. The carrier transport parameters were derived by the best fit through PCR measurements. Furthermore, an \(E_{\mathrm{v}}+0.56\) eV trap was introduced into the band gap based on the minority carrier lifetime reduction. An I–V characteristic was obtained by both AFORS-HET simulation and experimental study, and the simulation results shows in good agreement with the experimental results. Moreover, the simulation and experiment results also indicate that the increase of fluences of electron beams results in the reduction of short-circuit current and open-circuit voltage.

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Acknowledgments

This work was supported by the Chinese National Natural Science Foundation under Contract No.61571153 and Self-planned Task of State Key Laboratory of Robotics and System (HIT). The authors are grateful to Multi-Ions Accelerators (MIA) of Space Material Behavior and Evaluation National Key Lab of Harbin Institute of Technology, China, for supplying the irradiation equipment for this research.

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Author notes

  1. Y. Wang

    Present address: , No.92 West Dazhi Street, Nangang district, Harbin City, Heilongjiang Province, People’s Republic of China

Authors and Affiliations

  1. School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, 150001, People’s Republic of China

    P. Song, J. Y. Liu, H. M. Yuan, F. Wang & Y. Wang

  2. State Key Laboratory of Robotics and System (HIT), Harbin, 150001, People’s Republic of China

    J. Y. Liu & Y. Wang

Authors
  1. P. Song
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  2. J. Y. Liu
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  3. H. M. Yuan
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  4. F. Wang
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  5. Y. Wang
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Corresponding author

Correspondence to Y. Wang.

Additional information

This article is part of the selected papers presented at the 18th International Conference on Photoacoustic and Photothermal Phenomena.

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Song, P., Liu, J.Y., Yuan, H.M. et al. Photocarrier Radiometry for Noncontact Evaluation of Monocrystalline Silicon (c-Si) Solar Cell Irradiated by 1 MeV Electron Beams. Int J Thermophys 37, 87 (2016). https://doi.org/10.1007/s10765-016-2077-6

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  • DOI: https://doi.org/10.1007/s10765-016-2077-6

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