Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
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Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.
KeywordsTHz detectors Field-effect transistors Plasma waves Imaging
We thank prof. T. Skotnicki (ST Microelectronics) for providing the Silicon FETs, prof. A. Cappy and prof. S. Bollaert (IEMN, Lille) for providing InGaAs HEMTs. We thank also dr. P. Mounaix and dr. E. Abraham (LPMOH CNRS and Bordeaux I University) for their experimental support in the time domain spectroscopy. This work was financially supported in part by JSPS International Fellowship Program for Research in Japan, by the joint French-Lithuanian research program “Gilibert/EGIDE.”, and by the joint French-Japanese research program “Sakura/EGIDE.”. JŁ, WK and KK acknowledge the support of 162/THz/2006/02 and MTKD-CT-2005-029671 grants. The authors from the Montpellier University acknowledge the CNRS guiding GDR and GDR-E projects “Semiconductor sources and detectors of THz frequencies” and the Region of Languedoc-Roussillon through the “Terahertz Platform” project, as well as ANR TeraGaN project. Experiments at Vilnius were conducted under the project “Terahertz optoelectronics: devices and applications” (No. 179 J).
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