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A Ka-band Four-stage Self-biased Monolithic Low Noise Amplifier

  • Ziqiang Yang
  • Tao Yang
  • Yu Liu
Article
  • 110 Downloads

Abstract

A Ka-band four-stage self-biased monolithic low noise amplifier has been developed using a commercial 0.18-µm pseudomorphic high electron-mobility transistor (pHEMT) process. For the application of self-bias technique, the low noise amplifier (LNA) is biased from a single power supply rail. The LNA has achieved a broadband performance with a gain of more than 18 dB, a noise figure of less than 3.8 dB in the RF frequency of 26 to 40 GHz. The chip size is 3 × 1 mm2.

Keywords

Low noise amplifier Self-biased Monolithic microwave integrated circuit (MMIC) 

Notes

Acknowledgment

This work has supported by the National Natural Science Foundation of China (NSFC) and Youth Science and Technology Fund of UESTC.

References

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Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  1. 1.Microwave CenterUniversity of Electronic Science and Technology of ChinaChengduPeople’s Republic of China

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