A Ka-band Four-stage Self-biased Monolithic Low Noise Amplifier
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A Ka-band four-stage self-biased monolithic low noise amplifier has been developed using a commercial 0.18-µm pseudomorphic high electron-mobility transistor (pHEMT) process. For the application of self-bias technique, the low noise amplifier (LNA) is biased from a single power supply rail. The LNA has achieved a broadband performance with a gain of more than 18 dB, a noise figure of less than 3.8 dB in the RF frequency of 26 to 40 GHz. The chip size is 3 × 1 mm2.
KeywordsLow noise amplifier Self-biased Monolithic microwave integrated circuit (MMIC)
This work has supported by the National Natural Science Foundation of China (NSFC) and Youth Science and Technology Fund of UESTC.
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