MONTE CARLO STUDY OF SPATIO-TEMPORAL DISTRIBUTIONS OF PHOTO-DEMBER FIELD AND THZ RADIATION FROM InAs
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The spatio-temporal distributions of photo-Dember fields on the semiconductor surface of InAs and the pump wavelength-dependent dynamics of THz radiation from this semiconductor have been investigated with the method of ensemble Monte Carlo Simulation. Our simulations not only confirm the experimental results [P. Gu et al., J. Appl. Phys. 91, 5533(2002)] that the pump wavelength-dependent feature of THz pulse amplitudes for InAs is completely different with that for GaAs, but also point out that the corresponding mechanism is the characteristics of photo-Dember fields.
KeywordsTHz radiation photo-Dember field InAs Monte Carlo simulation
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