International Journal of Infrared and Millimeter Waves

, Volume 27, Issue 9, pp 1195–1207 | Cite as


  • Dong-feng Liu
  • Du Xu


The spatio-temporal distributions of photo-Dember fields on the semiconductor surface of InAs and the pump wavelength-dependent dynamics of THz radiation from this semiconductor have been investigated with the method of ensemble Monte Carlo Simulation. Our simulations not only confirm the experimental results [P. Gu et al., J. Appl. Phys. 91, 5533(2002)] that the pump wavelength-dependent feature of THz pulse amplitudes for InAs is completely different with that for GaAs, but also point out that the corresponding mechanism is the characteristics of photo-Dember fields.


THz radiation photo-Dember field InAs Monte Carlo simulation 


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Copyright information

© Springer Science+Business Media, Inc. 2007

Authors and Affiliations

  1. 1.School of Information EngineeringGuangDong University of TechnologyGuangzhouP. R. China

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