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High-Speed Coplanar Waveguide Based Submount for 40 Gbit/s Electroabsorption Modulator

  • Bing Xiong
  • Jianbo Tian
  • Jian Wang
  • Pengfei Cai
  • Changzheng Sun
  • Yi Luo
Original Article

Abstract

A high-speed submount has been designed and fabricated for 40 Gb/s electroabsorption (EA) modulators. The submount contains a coplanar waveguide (CPW) for microwave signal feeding and a Ta2N thin-film resistor for impedance matching. The CPW transmission line is designed to ensure low microwave loss and reflection, and Ti/Cu/Ni/Au metal is adopted for electrode fabrication to guarantee good contact with the Ta2N thin-film. The typical reflection coefficient of fabricated submount is estimated to be lower than−21 dB up to 40 GHz. As a demonstration, a high-speed EA modulator was chip-level packaged using the high-speed submount, and the measured small-signal modulation bandwidth was over 40 GHz.

Keywords:

High-speed submount Low-Loss Coplanar Waveguide (CPW) Thin-Film Resistor 40 Gb/s Electroabsorption (EA) Modulator 

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References

  1. [1]
    [1] N. Mineo, K. Nagai and T. Ushikubo, “Ultra wide-band electroabsorption modulator modules for DC to millimeter-wave band”, presented at 2001 International Topical Meeting on Microwave Photonics. Technical Digest. MWP'01, 7–9 Jan. 2002, Long Beach, CA, USA, 2001.Google Scholar
  2. [2]
    [2] J. Lim, Y. Kang, K. Choi, J. Lee, S. KIm and J. Kim, “Analysis and characterization of traveling-wave electrode in electroabsorption modulator for radio-on-fiber application”, Journal of Lightwave Technology, vol. 21, pp. 3004–3010, 2003.CrossRefGoogle Scholar
  3. [3]
    [3] B. Xiong, J. Wang, P. F. Cai, J. B. Tian, C. Z. Sun and Y. Luo, “Novel Low-cost wideband Si-based Submount for 40 Gb/s Optoelectronic Devices”, Microwave and Optical Technology Letters, vol. 45, pp. 90–93, 2005.CrossRefGoogle Scholar
  4. [4]
    [4] A. Katz, S. J. Pearton, S. Nakahara, F. A. Baiocchi, E. Lane and J. Kovalchick, “Tantalum nitride films as resistors on chemical vapor deposited diamond substrates”, Journal of Applied Physics, vol. 73, pp. 5208–5212, 1993.CrossRefGoogle Scholar
  5. [5]
    [5] R. Henderson, P. Zurcher, A. Duvallet, C. Happ, M. Petras, M. Raymond, T. Remmel, D. Roberts, B. Steimle, S. Straub, T. Sparks, M. Tarabbia and M. Miller, “Tantalum nitride thin film resistors for integration into copper metallization based RF-CMOS and BiCMOS technology platforms”, presented at Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on, 2001.Google Scholar
  6. [6]
    [6] J. M. Poate, K. N. Tu and J. W. Mayer, “Thin films: interdiffusion and reactions”, New York: Wiley, 1978.Google Scholar
  7. [7]
    [7] J. M. Morabito, J. H. Thomas and N. G. Lesh, “Material characterisation of Ti-Cu-Ni-Au (TCNA)-a new low cost thin film conductor system”, IEEE Transactions on Parts, Hybrids and Packaging, vol. PHP-11, pp. 253–62, 1975.Google Scholar

Copyright information

© Springer Science+Business Media, Inc. 2005

Authors and Affiliations

  • Bing Xiong
    • 1
  • Jianbo Tian
    • 1
  • Jian Wang
    • 1
  • Pengfei Cai
    • 1
  • Changzheng Sun
    • 1
  • Yi Luo
    • 1
  1. 1.State Key Lab of Integrated Optoelectronics Department of Electronic EngineeringTsinghua UniversityBeijingP.R. China

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