Mapping analyses of Fe-diffused mc-Si using Mössbauer microscope and photoluminescence
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57Fe-diffused multi-crystalline silicon (mc-Si) wafer was studied by both Mössbauer and photoluminescence (PL) microscopes. By observing the 57Fe doped and non-doped areas separated with grain boundaries, substitutional and interstitial Fe impurities appear to influence differently on the PL intensities, which are closely related to the carrier trappings at the Fe.
Keywords57Fe-mapping Fe doped mc-Si Mössbauer microscope Photoluminescence
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