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Hyperfine Interactions

, Volume 206, Issue 1–3, pp 75–78 | Cite as

Mapping analyses of Fe-diffused mc-Si using Mössbauer microscope and photoluminescence

  • Kiyotaka Tanaka
  • Yuki Akiyama
  • Kazuo Hayakawa
  • Ken-ichi Yukihira
  • Yutaka Yoshida
Article

Abstract

57Fe-diffused multi-crystalline silicon (mc-Si) wafer was studied by both Mössbauer and photoluminescence (PL) microscopes. By observing the 57Fe doped and non-doped areas separated with grain boundaries, substitutional and interstitial Fe impurities appear to influence differently on the PL intensities, which are closely related to the carrier trappings at the Fe.

Keywords

57Fe-mapping Fe doped mc-Si Mössbauer microscope Photoluminescence 

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Copyright information

© Springer Science+Business Media B.V. 2011

Authors and Affiliations

  • Kiyotaka Tanaka
    • 1
  • Yuki Akiyama
    • 1
  • Kazuo Hayakawa
    • 1
  • Ken-ichi Yukihira
    • 1
  • Yutaka Yoshida
    • 1
  1. 1.Shizuoka Institute of Science and TechnologyFukuroiJapan

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