The combination of hyperfine techniques and ab initio calculations has been shown to be a powerful tool to unravel structural and electronic characterizations of impurities in solids. A recent example has been the study of Cd-doped SnO, where ab initio calculations questioned previous TDPAC assignments of the electric-field gradient (EFG) in 111In-implanted Sn-O thin films. Here we present new TDPAC experiments at 111In-difused polycrystalline SnO. A reversible temperature dependence of the EFG was observed in the range 295–900 K. The TDPAC results were compared with theoretical calculations performed with the full-potential linearized augmented plane wave (FP-LAPW) method, in the framework of the density functional theory. Through the comparison with the theoretical results, we infer that different electronic surroundings around Cd impurities can coexist in the SnO sample.
KeywordsSnO Cd TDPAC Electric-field gradient
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