Formation of Fe i –B pairs in silicon at high temperatures
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We report on the detection of Fe i –B pairs in heavily B doped silicon using 57Fe emission Mössbauer spectroscopy following implantation of radioactive 57Mn+ parent ions (T 1/2 = 1.5 min) at elevated temperatures > 850 K. The Fe i –B pairs are formed upon the dissociation of Fe i –V pairs during the lifetime of the Mössbauer state (T 1/2 = 100 ns). The resulting free interstitial Fei diffuses over sufficiently large distances during the lifetime of the Mössbauer state to encounter a substitutional B impurity atom, forming Fe i –B pairs, which are stable up to ∼1,050 K on that time scale.
Key wordsFei–B p++ B doped silicon Mössbauer spectroscopy
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- 5.Bergholz, W.: Physica 116 B, 312 (1983)Google Scholar