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Silicate nanosized films prepared by the sol-gel method for use in planar technology for fabricating semiconductor gas sensors

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Abstract

This paper reports on the results of investigations into the specific features of the formation of silicate nanosized films from sols based on tetraethoxysilane (hydrolyzed in an acid medium in the presence of inorganic dopants) on the surface of semiconductor materials. The properties of the films thus prepared are analyzed as functions of the synthesis conditions of sols and the conditions of deposition and heat treatment of the films. It is demonstrated that these films can be used in technology for fabricating semiconductor gas sensors based on SnO2.

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  1. Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences, ul. Odoevskogo 24/2, St. Petersburg, 199155, Russia

    O. A. Shilova

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Original Russian Text Copyright © 2005 by Fizika i Khimiya Stekla, Shilova.

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Shilova, O.A. Silicate nanosized films prepared by the sol-gel method for use in planar technology for fabricating semiconductor gas sensors. Glass Phys Chem 31, 201–218 (2005). https://doi.org/10.1007/s10720-005-0044-6

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