Abstract
Thermoelectric thin film/substrate structures have many practical applications such as in heat recovery systems. The general problem of thermally induced delamination between a thermoelectric thin film and a substrate is investigated. The temperature varies along the length direction but is constant along the thickness direction of the film. Analytical solutions of the temperature field in the film and the stress intensity factors (SIFs) at the delamination crack tips are obtained. The combined heat convection and heat radiation between the film surfaces and the surrounding medium (i.e., the air) are taken into account. Numerical results show that the SIFs sharply increase as the tips of the delamination crack approach the ends of the film. The combined heat convection and heat radiation can increase or decrease the SIFs. The mechanism for the delamination propagation in the thermoelectric film/substrate system is examined. The critical (permissible) temperature difference across the film governing the delamination propagation is identified.
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Acknowledgements
This research was supported by Research Innovation Fund of Shenzhen City of China (Project Nos. JCYJ20170413104256729, JCYJ20170811160538023), the National Natural Science Foundation of China (Project Nos. 11672084, 11602072, 11372086), and the Natural Science Foundation of Guangdong Province of China (Project Nos. 2016A030311006, 2016A030310367).
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Cui, Y.J., Wang, K.F., Wang, B.L. et al. Analysis of thermally induced delamination of thermoelectric thin film/substrate system. Int J Fract 214, 201–208 (2018). https://doi.org/10.1007/s10704-018-0328-1
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DOI: https://doi.org/10.1007/s10704-018-0328-1