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Czechoslovak Journal of Physics

, Volume 56, Supplement 2, pp B1149–B1155 | Cite as

Microwave technology for the boost of performances in ECR ion sources

  • D. Mascali
  • S. Barbarino
  • F. Consoli
  • L. Celona
  • S. Gammino
  • G. Ciavola
  • F. Maimone
Article

Abstract

The role of microwave technology in ECR (Electron Cyclotron Resonance) ion sources has recently became more relevant as the increase of ion charge states and beam currents is demanding for higher microwave frequency and higher injected power to heat the plasma. In fact the scaling laws have anticipated the trend to higher frequency as that permit to rise the plasma density and finally the available beam current. Additionally, once the magnetic field follows the rules of the High B mode concept and the injected power is high enough, the increase of the average charge state produced by the ECR ion sources (ECRIS) is guaranteed. A review of recent experiences at INFN-LNS, Catania, along with the proposition of new operational set-ups will be presented. A theoretical explanation of the two-frequency heating is also given, featuring the physical condition for which such effect occurs, with the following increase of the ion beam current and ion charge states.

Key words

plasma microwave simulations ECRIS 

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Copyright information

© Institute of Physics, Academy of Sciences of Czech Republic 2006

Authors and Affiliations

  • D. Mascali
    • 1
    • 2
  • S. Barbarino
    • 1
    • 2
  • F. Consoli
    • 2
  • L. Celona
    • 2
  • S. Gammino
    • 2
  • G. Ciavola
    • 2
  • F. Maimone
    • 3
  1. 1.Dipartimento di Fisica e AstronomiaUniversitá di CataniaCataniaItaly
  2. 2.INFN — Laboratori Nazionali del SudCataniaItaly
  3. 3.Dipartimento di Ingegneria Informatica e delle TelecomunicazioniUniversitá di CataniaCataniaItaly

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