Czechoslovak Journal of Physics

, Volume 55, Issue 1, pp 65–72 | Cite as

Effects of hydrostatic pressure and temperature on electronic band parameters in Al x Ga1−xAs

  • M. Boucenna
  • N. Bouarissa


Influence of hydrostatic pressure and temperature on electronic band parameters for zinc-blende Al x Ga1−xAs was investigated by means of pseudopotential calculations. The agreement between our results and the available experimental data is generally satisfactory. Our results showed that the effect of pressure leads to a decrease of the crossing point and the optical bowing parameter. However, the temperature effect was found to be insignificant on both crossing point and bowing parameter.

Key words

electronic structure ternary semiconductors pressure effect temperature 


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Copyright information

© Springer Science+Business Media, Inc. 2005

Authors and Affiliations

  1. 1.Physics Department, Faculty of Science and EngineeringUniversity of M’silaM’silaAlgeria

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