Czechoslovak Journal of Physics

, Volume 55, Issue 1, pp 65–72 | Cite as

Effects of hydrostatic pressure and temperature on electronic band parameters in Al x Ga1−xAs



Influence of hydrostatic pressure and temperature on electronic band parameters for zinc-blende Al x Ga1−xAs was investigated by means of pseudopotential calculations. The agreement between our results and the available experimental data is generally satisfactory. Our results showed that the effect of pressure leads to a decrease of the crossing point and the optical bowing parameter. However, the temperature effect was found to be insignificant on both crossing point and bowing parameter.

Key words

electronic structure ternary semiconductors pressure effect temperature 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan: J. Appl. Phys. 89 (2001) 5815.CrossRefGoogle Scholar
  2. [2]
    S. Adachi, Ed.: Properties of Aluminum Gallium Arsenide, INSPEC, Stevenage, Herts., UK, 1993.Google Scholar
  3. [3]
    M. El-Allali, C.B. Sorensen, E. Veje, and P. Tidemand-Petersson: Phys. Rev. B 48 (1993) 4398.Google Scholar
  4. [4]
    H.J. Lee, L.Y. Juravel, J.C. Woolley, and A.J. Spring Thorpe: Phys. Rev. B 21 (1980) 659.Google Scholar
  5. [5]
    J.L. Aubel, U.K. Reddy, S. Sundaram, W.T. Beard, and J. Comas: J. Appl. Phys. 58 (1985) 495.Google Scholar
  6. [6]
    J.M. Wrobel, L.C. Bassett, J.L. Aubel, S. Sundaram, J.L. Davis, and J. Comas: J. Vac. Sci. Technol. 5 (1987) 1464.Google Scholar
  7. [7]
    C. Bosio, J.L. Staehli, M. Guzzi, G. Burri, and R.A. Logan: Phys. Rev. B 38 (1988) 3263.Google Scholar
  8. [8]
    N. Bouarissa: Mater. Chem. Phys. 72 (2001) 387.Google Scholar
  9. [9]
    See for example, M.L. Cohen and J.R. Chelikowsky: in Electronic Structure and Optical Properties of Semiconductors, (Eds. M. Cardona, P. Fulge, K. von Klitzing, and H.-J. Queisser), Springer-Verlag, Berlin-Heidelberg, 1988.Google Scholar
  10. [10]
    T. Kobayasi and H. Nara: Bull. Coll. Med. Sci. (Tohoku Univ.) 2 (1993) 7.Google Scholar
  11. [11]
    N. Bouarissa and H. Aourag: Phys. Status Solidi B 199 (1997) 403.Google Scholar
  12. [12]
    S. Adachi: J. Appl. Phys. 61 (1987) 4869 and references cited therein.Google Scholar
  13. [13]
    D.E. Aspnes, C.G. Olson, and D.W. Lynch: Phys. Rev. Lett. 37 (1976) 766.Google Scholar
  14. [14]
    M. Levinshtein, S. Rumyantsev, and M. Shur, Eds.: Handbook Series on Semiconductor Parameters, Vol. 1, World Scientific, Singapore, 1996; Vol. 2, World Scientific, Singapore, 1999.Google Scholar
  15. [15]
    F.D. Murnaghan: Proc. Natl. Acad. Sci. U.S.A. 30 (1944) 244.Google Scholar
  16. [16]
    A. Mujica, P. Rodriguez-Hernandez, S. Rdescu, R.J. Needs, and A. Munoz: Phys. Status Solidi B 211 (1999) 39.Google Scholar
  17. [17]
    O. Madelung, Ed.: Semiconductors - Basic Data, Springer, Berlin, 1996.Google Scholar
  18. [18]
    S.J. Lee, T.S. Kwon, K. Nahm, and C.K. Kim: J. Phys.: Condens. Matter 2 (1990) 3253.Google Scholar
  19. [19]
    N. Bouarissa: Phys. Lett. A 245 (1998) 285.Google Scholar
  20. [20]
    L. Vegard: Z. Phys. 5 (1921) 17.Google Scholar
  21. [21]
    A.K. Saxena: Phys. Status Solidi B 105 (1981) 777.Google Scholar
  22. [22]
    H.C. Casey, Jr. and M.B. Panish: Heterostructure Lasers, Part A: Fundamental Principles, Academic, New York, 1978, Chaps. 4 and 5.Google Scholar
  23. [23]
    J.C.M. Henning, J.P.M. Ansems, and P.J. Roksnoer: J. Phys. C 19 (1986) L335.Google Scholar
  24. [24]
    L. Pavesi and M. Guzzi: J. Appl. Phys. 75 (1994) 4779.Google Scholar
  25. [25]
    M. Guzzi, E. Grilli, S. Oggioni, J.L. Staehli, C. Bosio, and L. Pavesi: Phys. Rev. B 45 (1992) 10951.Google Scholar
  26. [26]
    K. Shim, D.N. Talwar, and H.-J. Moh: Solid State Commun. 97 (1996) 315.Google Scholar
  27. [27]
    N. Bouarissa and H. Aourag: Infrared Phys. Technol. 36 (1995) 973.Google Scholar
  28. [28]
    A.K. Saxena: J. Phys. C 13 (1980) 4323.Google Scholar

Copyright information

© Springer Science+Business Media, Inc. 2005

Authors and Affiliations

  1. 1.Physics Department, Faculty of Science and EngineeringUniversity of M’silaM’silaAlgeria

Personalised recommendations