In this paper, a fully-integrated tunable grounded memristor emulator circuit based on voltage differencing transconductance amplifier (VDTA) has been proposed. The proposed memristor emulator circuit utilizes two VDTA active building blocks, two grounded resistors, a grounded capacitor and a four-quadrant analog multiplier. The working concept along with the detailed derivation of the mathematical model of the circuit has been discussed numerically and analytically to validate the operation of the proposed emulator. The operations of the proposed emulator circuit, as governed by the established model, have been verified by performing simulations in Cadence Virtuoso at 45 nm technology node. Robustness analyses performed, reveal significant process-variation tolerance at deep sub-micron technology node.
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Chua, L. O. (1971). Memristor—the missing circuit element. IEEE Transactions on Circuit Theory,18(5), 507–519.
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008). The missing memristor found. Nature,453, 80–83.
Alibart, F., Gao, L., Hoskins, B. D., & Strukov, D. B. (2012). High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm. Nanotechnology,23, 075201.
Alibart, F., Pleutin, S., Guérin, D., Novembre, C., Lenfant, S., Lmimouni, K., et al. (2010). An organic nanoparticle transistor behaving as a biological spiking synapse. Advanced Functional Materials,20(2), 330–337.
Agnus, G., Zhao, W., Derycke, V., Filoramo, A., Lhuillier, Y., Lenfant, S., et al. (2010). Two-terminal carbon nanotube programmable devices for adaptive architectures. Advanced Materials,22(6), 702–706.
Yu, D. S., Liang, Y., Chen, H., & Lu, H. H. C. (2013). Design of a practical memcapacitor emulator without grounded restriction. IEEE Transactions on Circuits and Systems II,60(4), 207–211.
Alharbi, A. G., Fouda, M. E., Khalifa, Z. J., & Chowdhury, M. H. (2017). Electrical nonlinearity emulation technique for current-controlled memristive devices. IEEE Access,5, 5399–5409.
Elwakil, A. S., Fouda, M. E., & Radwan, A. G. (2013). A simple model of double-loop hysteresis behavior in memristive elements. IEEE Transaction on Circuits Systems II, Express Briefs,60(8), 487–491.
Kim, H., Sah, M. P., Yang, C., Cho, S., & Chua, L. O. (2012). Memristor emulator for memristor circuit applications. IEEE Transactions on Circuits System I, Regular Papers,59(10), 2422–2431.
Petrovic, P. B. (2018). Floating incremental/decremental flux-controlled memristor emulator circuit based on single VDTA. Analog Integrated Circuits and Signal Processing,96(3), 417–433.
Sánchez-López, C., Mendoza-López, J., Carrasco-Aguilar, M. A., & Muñiz-Montero, C. (2014). A floating analog memristor emulator circuit. IEEE Transactions on Circuits Systems II Express Briefs,61(5), 309–313.
Sánchez-López, C., Carrasco-Aguilar, M. A., & Muñiz-Montero, C. (2015). A 16 Hz–160 kHz memristor emulator circuit. AEU International Journal of Electronics and Communications,69(9), 1208–1219.
Cam, Z. G., & Sedef, H. (2017). A new floating memristance simulator circuit based on second generation current conveyor. Journal of Circuits, Systems and Computers,26(2), 1–15.
Ranjan, R. K., Rani, N., Pal, R., Paul, S. K., & Kanyal, G. (2017). Single CCTA based high frequency floating and grounded type of incremental/decremental memristor emulator and its application. Microelectronics Journal,60, 119–128.
Sánchez-López, C., & Aguila-Cuapio, L. E. (2017). A 860 kHz grounded memristor emulator circuit. AEU-International Journal of Electronics and Communications,73, 23–33.
Yunus, B., Abdullah, Y., & Firat, K. (2017). Memristor emulator with tunable characteristic and its experimental results. AEU-International Journal of Electronics and Communications,81, 99–104.
Sozen, H., & Cam, U. (2016). Electronically tunable memristor emulator circuit. Analog Integrated Circuits and Signal Processing,89(3), 655–663.
Babacan, Y., & Kaçar, F. (2017). Floating memristor emulator with subthreshold region. Analog Integrated Circuits and Signal Processing,90(2), 471–475.
Biolek, D., Senani, R., Biolkova, V., & Kolka, Z. (2008). Active elements for analog signal processing: Classification, review, and new proposals. Radioengineering,17(4), 15–32.
Mehra, R., Kumar, V., & Islam, A. (2018). Reliable and Q-enhanced floating active inductors and their application in RF bandpass filters. IEEE Access,6, 48181–48194.
Kumar, V., Mehra, R., & Islam, A. (2017). A CMOS active inductor based digital and analog dual tuned voltage-controlled oscillator. Microsystem Technologies,25, 1–13.
Yesil, A., Kacar, F., & Kuntman, H. (2011). New simple CMOS realization of voltage differencing transconductance amplifier and its RF filter application. Radioengineering,20(3), 632–637.
Gilbert, B. (1968). A precise four-quadrant multiplier with subnanosecond response. IEEE Journal of Solid-State Circuits,3(4), 365–373.
Yeşil, A., Babacan, Y., & Kaçar, F. (2019). Design and experimental evolution of memristor with only one VDTA and one capacitor. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,38(6), 1123–1132.
Kumar, P., Pandey, N., & Paul, S. K. (2017). Operational simulation of LC ladder filter using VDTA. Active and Passive Electronic Components,17, 1836727.
Querlioz, D., Bichler, O., Dollfus, P., & Gamrat, C. (2013). Immunity to device variations in spiking neural networks using memristive nanodevices. IEEE Transactions on Nanotechnology,12(3), 288–295.
Snider, G. S. (2008). Spike-timing-dependent learning in memristive nanodevices. In IEEE international symposium on nanoscale architectures. Anaheim (pp. 85–92).
Saha, S. K. (2014). Compact MOSFET modeling for process variability-aware VLSI circuit design. IEEE Access,2, 104–115.
Li, Y., Hwang, C.-H., Li, T.-Y., & Han, M.-H. (2010). Process-variation effect, metal-gate work-function fluctuation, and random-dopant fluctuation in emerging CMOS technologies. IEEE Transactions on Electron Devices,57(2), 437–447.
Semiconductor Industry Association. (2009). International technology roadmap for semiconductors. Retrieved January 15, 2018, from http://www.itrs2.net/itrs-reports.html.
Pal, I., & Islam, A. (2018). Circuit-level technique to design variation- and noise-aware reliable dynamic logic gates. IEEE Transactions on Device and Materials Reliability,18(2), 224–239.
Pelgrom, M. J. M., Duinmaijer, A. C. J., & Welbers, A. P. G. (1989). Matching properties of MOS transistors. IEEE Journal of Solid-State Circuits,24(5), 1433–1439.
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Pal, I., Kumar, V., Aishwarya, N. et al. A VDTA-based robust electronically tunable memristor emulator circuit. Analog Integr Circ Sig Process 104, 47–59 (2020). https://doi.org/10.1007/s10470-019-01575-y
- Voltage differencing transconductance amplifier
- Memristor emulator