Skip to main content
SpringerLink
Log in

Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology

  • Published:
Analog Integrated Circuits and Signal Processing Aims and scope Submit manuscript

Abstract

In this paper a monolithic balun for mixers and amplifiers based on BiCMOS Technology presented on chip integrated balun based on 0.25 μm SiGe BiCMOS technology. monolithic microwave integrated circuit is designed by the passive double-balanced mixers with the help of resistive field effect transistor topology. The formation of integrated monolithic balun is a cross coupled and asymmetric. The performance of monolithic balun is measured over the range of 0–5 GHz frequency range. This balun is having the specification of conversion gain Gc is greater than − 10 dB, RF IC isolation is greater than 25 dB, LO–RF and LO–IF isolation is greater than 40 dB, return losses at IF and RF ports are better than − 10 dB. In terms of dimensions we uses the length and width of the periphery 800 × 600 μm. For layer conductance we uses the substrate as Silicon TopMetal2.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8

Similar content being viewed by others

References

  1. Maas, S. A. (2003). Nonlinear microwave and RF circuits (2nd ed.). Norwood: Artech House.

    Google Scholar 

  2. Wang, X., Dengi, A., & Kiaei, S. (2004). A high IIP3 X-band BiCMOS mixer for radar applications. In Proceedings of the 2004 international symposium on circuits and systems (Vol. 1, pp. 113–116).

  3. Chen, J.-H., et al. (2010). A 15–50 GHz broadband resistive FET ring mixer using 0.18 μm CMOS technology. In IEEE MTT-S International microwave symposium digest (MTT), May 2010 (pp. 784–787).

  4. Michaelson, R. S., et al. (2015). A SiGe BiCMOS double-balanced mixer with active balun for X-band doppler radar. In 2015 SBMO/IEEE MTT-S International microwave and optoelectronics conference (IMOC), November 2015 (pp. 1–5).

  5. Kokolov, A. A., Sheyerman, F. I., & Babak, L. I. (2017). Broadband differential 1.5–5 GHz LO buffer amplifier based on SiGe BiCMOS technology. In International Siberian conference on control and communications (SIBCON–2017).

  6. Sheyerman, F. I., Dobush, I. M., Kokolov, A. A., Salnikov, A. S., Cherkashin, M. V., Babak, L. I., et al. (2017). Broadband IP-blocks for L- and S-band receiver SoC based on 0.25 μm SiGe technology. In 2017 Dynamics of systems, mechanisms and machines (dynamics).

  7. Salnikov, A. S., Kokolov, A. A., Sheyerman, F. I., Musenov, R. Y., Dobush, I. M., & Babak, L. I. (2016). A 1–4.5 GHz MMIC mixer based on SiGe BiCMOS technology. In 2016 13th International scientific-technical conference on actual problems of electronics instrument engineering (APEIE), October 2016 (Vol. 1, pp. 97–100).

  8. Chaturvedi, A., Kumar, M., & Meena, R. S. (2014). Double balanced diode ring mixer for ultra wideband system. In 2014 Fourth international conference on communication systems and network technologies (pp. 1074–1077).

  9. Hu, B., Yu, X., & He, L. (2010). A group-selected and gain controllable CMOS active mixer for UWB applications. In 2010 IEEE International conference on ultra-wideband (pp. 2–5).

  10. Itapu, S., Almalkawi, M., & Devabhaktuni, V. (2015). A 0.8–8 GHz multi-section coupled line balun. Electronics, 2015, 274–282.

    Article  Google Scholar 

  11. Poddar, A. K. (2016). A novel UWB balun: application in 5G systems. In 2016 IEEE International frequency control symposium (IFCS) (pp. 3–9).

  12. Sorokosz, L., Zieniutycz, W., & Pergol, M. (2011). Compact planar balun for the UWB dipole feeding network. In Proceedings of 21st international conference Radioelektronika 2011.

  13. Hammed, R. T. (2015). Compact Marchand balun circuit for UWB application. AEU-International Journal of Electronics and Communication, 69(05), 851–855.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Birla Institute of Applied Sciences Bhimtal, Nainital, India

    Muneer Khan

Authors
  1. Muneer Khan
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Muneer Khan.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Khan, M. Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology. Analog Integr Circ Sig Process 101, 237–242 (2019). https://doi.org/10.1007/s10470-019-01543-6

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10470-019-01543-6

Keywords

Search

Navigation