A 600 V high voltage gate driver IC with excellent allowable negative VS bias capability for E-mode GaN power devices

Abstract

In this paper, a 600 V high voltage gate driver IC with excellent allowable negative VS bias capability is proposed. In order to prevent the bootstrap capacitor from overcharging, a voltage signal from negative voltage sensor is utilized to control the charging path of it when the negative voltage in VS is detected. A bilevel isolated bootstrap circuit is utilized for the level shifter and the subsequent circuit, respectively. It guarantees the normally functions even when VS is lower than − VCC. The proposed 600 V gate driver IC is fabricated in 0.5 μm 600 V Bipolar–CMOS–DMOS process. Measured results show that its basic function is normal even when Vs = − 6 V at 5 V power supply voltage. The quiescent current when Vs = − 6 V is 40.63 μA, which is approximately same with it when VS = 0 V.

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Acknowledgements

This work was supported by the National Key Research and Development Plan (2017YFB0402904), the National Natural Science Foundation of China (61874026, 61804026, 61504025), the China Postdoctoral Science Foundation (2019M651647, 2019T120376), the Jiangsu Postdoctoral Research Foundation (2018K001A), the Key Research and Development Plan of Jiangsu (BE2018003-3) and the Fundamental Research Funds for the Central Universities.

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Correspondence to Weifeng Sun.

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Lu, Y., Zhu, J., Hu, K. et al. A 600 V high voltage gate driver IC with excellent allowable negative VS bias capability for E-mode GaN power devices. Analog Integr Circ Sig Process 104, 27–36 (2020). https://doi.org/10.1007/s10470-019-01537-4

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Keywords

  • Allowable negative Vs bias capability
  • Gallium nitride
  • High voltage gate driver