Journal of Solid State Electrochemistry

, Volume 22, Issue 5, pp 1557–1562 | Cite as

Electrodeposition of Fe-doped Sb2Se3 thin films for photoelectrochemical applications and study of the doping effects on their properties

Original Paper

Abstract

Sb2Se3 (SSe) has been highlight as a low-cost, less complex, low toxicity, and earth-abundant photovoltaic (PV) absorber not only because of its excellent properties but also because of its demonstrated 5.6% certified efficiency and decent device stability. An understanding of the effects of intentional dopants on the properties of this material would help to further improve SSe PV devices. In this work, Fe-doped SSe thin film was obtained by electrodeposition at different levels of doping, which is an easy, cheap, and scalable technique. At the studied levels, this dopant caused low influence in band gap and morphologic-structural properties of the films; however, it did impact their electronic properties and photoactivity toward hydrogen gas evolution. The film obtained from a deposition bath composed of 5% of Fe presented a photocurrent similar to that shown by the undoped film, despite showing a carrier density that was three orders of magnitude higher. This behavior makes us believe that, compared to the undoped film, a photovoltaic device made with this 5% Fe-doped film would have a higher fill factor and efficiency.

Keywords

Antimony selenide Photoelectrochemistry Water splitting Less complex, low toxicity, and earth-abundant semiconductor One-dimensional (Sb4Se6)n ribbons 

Notes

Acknowledgments

This work was supported by National Counsel of Technological and Scientific Development (CNPq) and the São Paulo Research Foundation (FAPESP), grant #2016/10513-3 and CEPID grant #2013/07296-2.

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Copyright information

© Springer-Verlag GmbH Germany 2017

Authors and Affiliations

  1. 1.Interdisciplinary Laboratory of Electrochemistry and Ceramics (LIEC)Federal University of São CarlosSão CarlosBrazil

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