Microsystem Technologies

, Volume 24, Issue 9, pp 3851–3861 | Cite as

Design of a biaxial high frequency-ratio low-g MEMS accelerometer

  • Xiaowei Shan
  • Jorge Angeles
  • James Richard Forbes
Technical Paper


The optimum design of a biaxial MEMS accelerometer for low-g applications, along with its fabrication and testing, is reported in this paper. The monolithic structure was optimally designed based on a fully symmetric architecture with a high frequency ratio between the insensitive and the sensitive axes. The sensing substructure was designed, in turn, with a configurable comb-structure for simultaneous biaxial capacitive sensing. This accelerometer was fabricated with high precision and tested under 1-g acceleration, both statically and dynamically. The corresponding static sensitivity is 1.55 μm/g, while the capacitance sensitivity is 113.5 fF/g.



We would like to acknowledge CMC Microsystems for the provision of services that facilitated this research work. NSERC’s support through a Discovery Grant is dutifully acknowledged. NSERC is Canada’s Natural Sciences and Engineering Research Council. The support of FRQNT (Fonds de recherche du Québec-Nature et technologies) through the New University Researchers Start-up Program is gratefully acknowledged. The MEDA scholarship from McGill University supported the first author at her PhD studies on biaxial accelerometers. The second author acknowledges the support provided by a James McGill Professorship.


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.McGill Centre for Intelligent Machines & Department of Mechanical EngineeringMcGill UniversityMontrealCanada

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