Material selection methodology for radio frequency (RF) microelectromechanical (MEMS) capacitive shunt switch

Technical Paper


This paper describes the process of selecting the most optimum Radio Frequency Micro- electro- mechanical-systems (RF-MEMS) switch design using Ashby’s methodology. The switches are compared on the basis of parameters like actuation voltage, insertion loss, isolation and switching time using material selection charts. The chart shows that a low-voltage metal-to-metal contact shunt capacitive RF-MEMS having a bridge structure with Si-GaAs substrate, electroplated gold contacts and silicon nitride dielectric layer, is the most optimum of all the switches considered.


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of Electrical and Electronics EngineeringBirla Institute of Technology and SciencePilaniIndia

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