Erratum to: Elektrotechnik & Informationstechnik (2018) 135/1: 69–75 https://doi.org/10.1007/s00502-017-0569-0
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The financial support of the presented research work by the Austrian Science Fund (FWF) under the project number T 756-N20 is gratefully acknowledged.
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The online version of the original article can be found under https://doi.org/10.1007/s00502-017-0569-0.
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Michalowska-Forsyth, A., Schrey, P. & Deutschmann, B. Erratum to: Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance. Elektrotech. Inftech. 136, 224 (2019). https://doi.org/10.1007/s00502-018-0648-x
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DOI: https://doi.org/10.1007/s00502-018-0648-x