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A radiation-hard curvature compensated bandgap voltage reference

Eine strahlungsfeste Curvature-kompensierte Bandgap-Spannungsreferenz

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Abstract

In this work a radiation-hardened bandgap voltage reference circuit is presented. The circuit is targeted at precision applications, where trimming can be used to achieve a temperature coefficient smaller than \(5~\mbox{ppm}/\mbox{K}\). Curvature compensation is employed and trimming of the temperature coefficient and the curvature is possible. In order to achieve good performance several techniques were combined. Radiation hardening techniques on layout level were used along with design techniques to improve the robustness against total ionizing dose (TID) and process variations. The radiation hardness requirements were set after preliminary irradiation tests. At the layout level optimized transistors were used while at the topology level, a radiation-hardened trimming scheme was employed to mitigate the impact of leakage currents. Chopping techniques were required to ensure good performance over the process and temperature variations. The bandgap was realized in a standard 180 nm CMOS process and circuit performance was verified using extensive simulations.

Zusammenfassung

In dieser Arbeit wird eine strahlungsgehärtete Bandgap-Spannungsreferenzschaltung vorgestellt. Die Schaltung ist auf Präzisionsanwendungen ausgelegt, wo Trimming verwendet werden kann, um einen Temperaturkoeffizienten von weniger als 5 ppm/K zu erreichen. Es wird eine Curvature-Kompensation verwendet, um Trimmen des Temperaturkoeffizienten und der Krümmung zu ermöglichen. Um eine gute Leistung zu erzielen, wurden verschiedene Techniken kombiniert. Strahlungshärtungstechniken auf Layout-Ebene wurden zusammen mit Designtechniken verwendet, um die Robustheit gegen die Gesamtdosis ionisierender Strahlung (Total Ionzing Dose, TID) und Prozessschwankungen zu verbessern. Die Anforderungen an die Strahlungshärte wurden nach ersten Bestrahlungstests festgelegt. Auf der Layout-Ebene wurden optimierte Transistoren verwendet, während auf der Topologie-Ebene ein strahlengehärtetes Trimmschema verwendet wurde, um die Auswirkungen von Leckströmen zu mindern. Chopping war erforderlich, um eine gute Performance trotz Prozess- und Temperaturschwankungen sicherzustellen. Die Bandgap-Referenz wurde in einem Standard-180-nm-CMOS-Prozess realisiert, und die Schaltungsleistung wurde mit umfangreichen Simulationen verifiziert.

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  1. Institute of Electronics, Graz University of Technology, Graz, Austria

    Mario Auer & Varvara Bezhenova

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  1. Mario Auer
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  2. Varvara Bezhenova
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Correspondence to Mario Auer.

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Auer, M., Bezhenova, V. A radiation-hard curvature compensated bandgap voltage reference. Elektrotech. Inftech. 135, 3–9 (2018). https://doi.org/10.1007/s00502-018-0591-x

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