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Grain boundary diffusion of Cu in TiN film by X-ray photoelectron spectroscopy

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Abstract.

In this study, the grain boundary diffusion of Cu through a TiN layer with columnar structure was investigated by X-ray photoelectron spectroscopy (XPS). It was observed that Cu atoms diffuse from the Cu layer to the surface along the grain boundaries in the TiN layer at elevated temperature. In order to estimate the grain boundary diffusion constants, we used the surface accumulation method. The diffusivity of Cu through TiN layer with columnar structure from 400 °C to 650 °C is Db≈6×10−11exp(−0.29/(kBT )) cm2/s.

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Authors and Affiliations

  1. Atomic-scale Surface Science Research Center and Department of Physics, Yonsei University, Seoul 120-749, Korea, , , , , , KR

    K.Y. Lim, Y.S. Lee, Y.D. Chung, I.W. Lyo & C.N. Whang

  2. Department of Physics, Chungbuk National University, Chungju 360-763, Korea, , , , , , KR

    J.Y. Won & H.J. Kang

Authors
  1. K.Y. Lim
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  2. Y.S. Lee
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  3. Y.D. Chung
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  4. I.W. Lyo
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  5. C.N. Whang
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  6. J.Y. Won
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  7. H.J. Kang
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Additional information

Received: 18 May 1999 / Accepted: 8 September 1999 / Published online: 23 February 2000

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Lim, K., Lee, Y., Chung, Y. et al. Grain boundary diffusion of Cu in TiN film by X-ray photoelectron spectroscopy. Appl Phys A 70, 431–434 (2000). https://doi.org/10.1007/s003390051062

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  • DOI: https://doi.org/10.1007/s003390051062

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