The damage investigations of 4H–SiC after P-ion irradiation


In this work, a single crystal of 4H–SiC was subjected to phosphorus irradiation at 100 keV with four different fluences at room temperature (RT) and post-irradiation annealing treatments at temperature range from 200 to 600 °C. The measured effective refractive index reflected that the disorder increased with the increasing fluences and partially recovered after our annealing treatments. Rutherford backscattering /channeling (RBS/C) experiments displayed that above the fluence of 5.0 × 1014 ions/cm2, severe damage caused in the surface of 4H-SiC crystal. The amorphous layer about 136 nm induced when the fluence is up to 1.0 × 1015 ions/cm2 according to the transmission electron microscopy (TEM) results. The amorphous phenomenon was explained by lattice swelling. We obtained the damage threshold value for the formation of amorphous in 4H–SiC crystal is about 0.3 dpa. Phosphor is one of the important semiconductor dopant elements. This work provides reference data on selective doping of SiC-based electronic devices.

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Data availability

Not applicable (The data used in this manuscript are shown in the “Text” section. Code availability (software application or custom code): Not applicable.


  1. 1.

    D. Zhuang, J.H. Edgar, Mater. Sci. Eng. R 48, 1–46 (2005)

    Article  Google Scholar 

  2. 2.

    H. Deng, K. Endo, K. Yamamura, Sci. Rep. 5, 8947 (2015)

    ADS  Article  Google Scholar 

  3. 3.

    T.J. Gerczak, B. Leng, K. Sridharan, J.L. Hunter, A.J. Giordani, T.R. Allen, J. Nucl. Mater. 461, 314–324 (2015)

    ADS  Article  Google Scholar 

  4. 4.

    Y. Gao, S.I. Soloviev, T.S. Sudarshan, C.C. Tin, J. Appl. Phys. 90, 5647–5651 (2001)

    ADS  Article  Google Scholar 

  5. 5.

    M.J. Madito, T.T. Hlatshwayo, V.A. Skuratov, C.B. Mtshali, N. Manyala, Z.M. Khumalo, Appl. Surf. Sci. 493, 1291–1298 (2019)

    ADS  Article  Google Scholar 

  6. 6.

    R. Nipoti, A. Parisini, G. Sozzi, M. Puzzanghera, A. Parisini, A. Carnerad, J. Solid State Sci. Technol. 5, 621–626 (2016)

    Article  Google Scholar 

  7. 7.

    T. Ohshima, A. Uedono, K. Abe, H. Itoh, Y. Aoki, M. Yoshikawa, S. Tanigawa, I. Nashiyama, Appl. Phys. A 67, 407–412 (1998)

    ADS  Article  Google Scholar 

  8. 8.

    Z. Tian, X. Xu, F. Jiang, J. Lu, Q. Luo, J. Lin, Ceram. Int. 45, 21998–22006 (2019)

    Article  Google Scholar 

  9. 9.

    T. Wang, G. Liu, Y. Li, H. Hou, Z. Xu, M. Wang, G. Qiao, J. Chem. Phys. 147, 024707 (2017)

    ADS  Article  Google Scholar 

  10. 10.

    C. Calabretta, M. Zimbone, E.G. Barbagiovanni, S. Boninelli, N. Piluso, A. Severino, M.A. di Stefano, S. Lorenti, L. Calcagno, F. La Via, Mater. Sci. Forum 963, 399–402 (2019)

    Article  Google Scholar 

  11. 11.

    Y. Negoro, K. Katsumoto, T. Kimoto, H. Matsunami, J. Appl. Phys. 96, 224–228 (2004)

    ADS  Article  Google Scholar 

  12. 12.

    M. Laube, F. Schmid, G. Pensl, G. Wagner, M. Linnarsson, M. Maier, J. Appl. Phys. 92, 549–554 (2002)

    ADS  Article  Google Scholar 

  13. 13.

    C.J. Liu, S. Liu, J.J. Feng, R. Wu, J. Semicond. 33, 036002 (2012)

    Article  Google Scholar 

  14. 14.

    C. Calabretta, M. Agati, M. Zimbone, S. Boninelli, A. Castiello, A. Pecora, G. Fortunato, L. Calcagno, L. Torrisi, F.L. Via, Materials 12, 3362 (2019)

    ADS  Article  Google Scholar 

  15. 15.

    G. Xin, G.S. Sun, J.M. Li, Y.X. Zhang, L. Wang, W.S. Zhao, Y.P. Zeng, Chin. Phys. 14, 599–603 (2005)

    Article  Google Scholar 

  16. 16.

    A. Severino, D. Mello, S. Boninelli, F. Roccaforte, F. Giannazzo, P. Fiorenza, C. Calabretta, L. Calcagno, N. Piluso, G. Arena, Mater. Sci. Forum 963, 407–411 (2019)

    Article  Google Scholar 

  17. 17.

    O.J. Guy, M. Lodzinski, K.S. Teng, T.G.G. Maffeis, M. Tan, I. Blackwood, P.R. Dunstan, O. Al-Hartomy, S.P. Wilks, T. Wilby, N. Rimmer, D. Lewis, J. Hopkins, Appl. Surf. Sci. 254, 8098–8105 (2008)

    ADS  Article  Google Scholar 

  18. 18.

    K.F. Cai, A.X. Zhang, J.L. Yin, H.F. Wang, X.H. Yuan, Appl. Phys. A 91, 579–584 (2008)

    ADS  Article  Google Scholar 

  19. 19.

    Y. Zhang, W.J. Weber, W. Jiang, C.M. Wang, A. Hallén, G. Possnert, J. Appl. Phys. 93, 1954–1960 (2003)

    ADS  Article  Google Scholar 

  20. 20.

    Y. Liu, M.L. Crespillo, Q. Huang, T.J. Wang, P. Liu, X.L. Wang, J. Appl. Phys. D: Appl. Phys. 50, 055303 (2017)

    ADS  Article  Google Scholar 

  21. 21.

    B.S. Li, Y.Y. Du, Z.G. Wang, K.F. Wei, H.P. Zhang, C.F. Yao, H.L. Chang, J.R. Sun, M.H. Cui, Y.B. Sheng, L.L. Pang, Y.B. Zhu, X. Gao, P. Luo, H.P. Zhu, J. Wang, D. Wang, Vacuum 113, 75–83 (2015)

    ADS  Article  Google Scholar 

  22. 22.

    J. Slotte, K. Saarinen, M.S. Janson, A. Hallén, A.Y. Kuznetsov, B.G. Svensson, J. Wong-Leung, C. Jagadish, J. Appl. Phys. 97, 033513 (2005)

    ADS  Article  Google Scholar 

  23. 23.

    R. Nipoti, E. Albertazzi, M. Bianconi, R. Lotti, G. Lulli, M. Cerverab, A. Carnera, Appl. Phys. Lett. 70, 3425–3427 (1997)

    ADS  Article  Google Scholar 

  24. 24.

    F.X. Zhang, Y. Tong, H.Z. Xue, J.K. Keum, Y.W. Zhang, A. Boulle, A. Debelle, W.J. Weber, Appl. Phys. Lett. 114, 221904 (2019)

    ADS  Article  Google Scholar 

  25. 25.

    Y.W. Zhang, H.Z. Xue, E. Zarkadoula, R. Sachan, C. Ostrouchov, P. Liu, X.L. Wang, S. Zhang, T.S. Wang, W.J. Weber, Curr. Opin. Solid State Mater. Sci. 21, 285–298 (2017)

    ADS  Article  Google Scholar 

  26. 26.

    N. Daghbouj, B.S. Li, M. Callisti, H.S. Sen, M. Kaelik, T. Polcar, Acta Mater 181, 160–172 (2019)

    Article  Google Scholar 

  27. 27.

    L.B. Bayu-Aji, E. Stavrou, J.B. Wallace, A. Boulle, A. Debelle, S.O. Kucheyev, Appl. Phys. A 125, 28 (2019)

    ADS  Article  Google Scholar 

  28. 28.

    S. Sorieul, J.M. Costantini, L. Gosmain, L. Thomé, J.J. Grob, J. Phys.: Condens. Matter 18, 5235–5251 (2006)

    ADS  Google Scholar 

  29. 29.

    Q. Jia, K. Huang, T. You, A. Yi, J. Lin, S. Zhang, M. Zhou, B. Zhang, B. Zhang, W. Yu, X. Ou, X. Wang, Appl. Phys. Lett. 112, 192102 (2018)

    ADS  Article  Google Scholar 

  30. 30.

    Y.Y. Du, B.S. Li, Z.G. Wang, J.R. Sun, W. Dong, Acta Phys. Sin. 63, 216101 (2014)

    Google Scholar 

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The Natural Science Foundation of Shandong Province (Grant No. ZR2017MA052, ZR2019MF029) and the National Nature Science Foundation of China (Grant No. 11805142).

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Zhao, J., Ye, L., Jiao, X. et al. The damage investigations of 4H–SiC after P-ion irradiation . Appl. Phys. A 126, 531 (2020).

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  • P-ion irradiation
  • 4H–SiC
  • RBS/C
  • Damage