Oxygen manipulation at the Co/SiO2 interface and its effect on spin-dependent transport properties


Oxygen manipulation at ferromagnetic metal (FM)/oxide heterointerfaces has been proved to be significantly effective in tailoring magnetic and transport properties. Herein, oxygen migration at the Co/SiO2 interface with the aid of post-annealing treatment induces an enhancement of the anomalous Hall effect (AHE) for Pt/[Co/Pt]2/Co/SiO2/Pt multilayers, which is identified by X-ray photoelectron spectroscopy. Nevertheless, there is not oxygen migration phenomenon at the SiO2/Co interface and the AHE is weakened due to Co–Pt interdiffusion during the annealing process for Pt/SiO2/Co/[Pt/Co]2/Pt multilayers. This work may pave the way toward the application of FM/oxide heterointerfaces in spintronic devices.

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This work was supported by the Hebei Provincial Natural Science Foundation of China (Grant No. E2018209278).

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Correspondence to Qian Liu or Yuqing Zhao or Shaolong Jiang.

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Liu, Q., Tian, Y., Zheng, X. et al. Oxygen manipulation at the Co/SiO2 interface and its effect on spin-dependent transport properties. Appl. Phys. A 126, 509 (2020). https://doi.org/10.1007/s00339-020-03680-6

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  • Anomalous Hall effect
  • The Co/SiO2 interface
  • Oxygen manipulation