Effect of gate–source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors
In this paper, the AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate–source spacings were fabricated. Using the measured parasitic source access resistance and the scattering theoretical calculation, it is verified that the gate–source spacing can affect the parasitic source access resistance by altering PCF scattering. This paves a possible way to utilize this effect to improve the performance of AlGaN/GaN HFETs by choosing the optimizing gate-source spacing.
This work was supported by the National Natural Science Foundation of China (Grant Nos. 11574182, 11174182, and 61674130).