Applied Physics A

, 124:359 | Cite as

Effect of gate–source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors

  • Peng Cui
  • Zhaojun Lin
  • Chen Fu
  • Yan Liu
  • Yuanjie Lv
Article
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Abstract

In this paper, the AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate–source spacings were fabricated. Using the measured parasitic source access resistance and the scattering theoretical calculation, it is verified that the gate–source spacing can affect the parasitic source access resistance by altering PCF scattering. This paves a possible way to utilize this effect to improve the performance of AlGaN/GaN HFETs by choosing the optimizing gate-source spacing.

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Notes

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11574182, 11174182, and 61674130).

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Peng Cui
    • 1
  • Zhaojun Lin
    • 1
  • Chen Fu
    • 1
  • Yan Liu
    • 1
  • Yuanjie Lv
    • 2
  1. 1.School of MicroelectronicsShandong UniversityJinanChina
  2. 2.National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research InstituteShijiazhuangChina

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