Applied Physics A

, 124:342 | Cite as

A new design approach for enhancement of DC/RF characteristics with improved ambipolar conduction of charge plasma TFET: proposal, and optimization

  • Mohd. Aslam
  • Dheeraj Sharma
  • Shivendra Yadav
  • Deepak Soni
  • Varun Bajaj


This article presents a new device structure to suppress ambipolarity with enhanced electrostatic characteristics of charge plasma TFET (CP-TFET). Here, implantation of a metal angle (MA) of low workfunction inside the high-k dielectric (HfO\(_{2}\)) layer near source/channel interface gives excellent improvement in DC and RF characteristics of the proposed device. Deposition of MA is advantageous to increase abruptness of source/channel junction for reducing the tunneling barrier. Along with MA placement, the metal electrode, which is placed over the silicon wafer for inducing N\(^{+}\) drain region, is divided into the two parts of low and high workfunctions. The workfunction of the part of metal electrode near the channel region is taken comparatively higher than the other part to restrict the tunneling of holes at drain/channel junction under negative bias (\(-V_\mathrm{gs}\)) condition. Such concept induces asymmetrical concentration of charge carriers in the drain region, which widens the tunneling barrier at the drain/channel interface. Consequently, the proposed device shows better RF performance along with suppressed ambipolar conduction. Furthermore, reliability of conventional and proposed structures has been tested in terms of linearity. Simultaneously, the effect of workfunction and length variation of MA on the device characteristics is analyzed in optimization section of the article.



The authors would like to thank the Science and Engineering Research Board, Department of Science and Technology, Government of India (established through an act of parliament) for providing the financial support to carry out this work. As this work has been implemented under the project “Implementation of Sigma Delta Modulator Using Nanowire Electrically Doped Hetero Material Tunnel Field Effect Transistor (TFET) for Ultra Low Power Applications” which is funded by this board.


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.PDPM-Indian Institute of Information TechnologyDesign and ManufacturingJabalpurIndia

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