Influences of ultrathin amorphous buffer layers on GaAs/Si grown by metal–organic chemical vapor deposition
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In this work, a technique for the growth of GaAs epilayers on Si, combining an ultrathin amorphous Si buffer layer and a three-step growth method, has been developed to achieve high crystalline quality for monolithic integration. The influences of the combined technique for the crystalline quality of GaAs on Si are researched in this article. The crystalline quality of GaAs epilayer on Si with the combined technique is investigated by scanning electron microscopy, double crystal X-ray diffraction (DCXRD), photoluminescence, and transmission electron microscopy measurements. By means of this technique, a 1.8-µm-thick high-quality GaAs/Si epilayer was grown by metal–organic chemical vapor deposition. The full-width at half-maximum of the DCXRD rocking curve in the (400) reflection obtained from the GaAs/Si epilayers is about 163 arcsec. Compared with only using three-step growth method, the current technique reduces etch pit density from 3 × 106 cm−2 to 1.5 × 105 cm−2. The results demonstrate that the combined technique is an effective approach for reducing dislocation density in GaAs epilayers on Si.
This work was supported by the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications) under Grant IPOC2016ZT01, the National Natural Science Foundation of China under Grant No. 61674020, 61574019, and 61474008, the International Science & Technology Cooperation Program of China under Grant 2011DFR11010, the 111Project of China under Grant B07005.
- 34.Y.L. He, X.N. Liu, Acta Electron Sin 4, 71 (1982)Google Scholar