Properties of Al- and Ga-doped thin zinc oxide films treated with UV laser radiation
- 25 Downloads
This paper reports the Nd:YAG laser irradiation treated modified properties of aluminum (Al) and gallium (Ga) co-doped zinc oxide (ZnO) (AGZO) films prepared on Si-substrate via combined sol–gel and spin-coating method. The impact of varying laser energy (150–200 mJ) on the structure, morphology, electrical and optical properties of such AGZO films were determined. Laser-treated samples were characterized using various analytical tools. Present techniques could achieve a high-quality polycrystalline films compared with those produced via conventional high temperature processing. AGZO films irradiated with third harmonics UV radiation (355 nm) from Nd:YAG laser source revealed very low resistivity of 4.02 × 10− 3 Ω cm. The structural properties grain size was calculated firm the X-ray diffraction spectra using the Scherrer equation that increased from 12.7 to 22.5 nm as the annealing laser energy increased from (150–200) mJ. The differences in crystallinity and orientation are explained in terms of the thermal effect caused by laser irradiation. (FESEM) images have been demonstrated that Nd:YAG laser annealing can significantly improve the crystallinity level, densification, and surface flatness of sol–gel derived AGZO thin films that occurred as a result of laser processing. Synthesized AGZO films displayed favorable growth orientation along (101) lattice direction. AGZO films with energy band gap of 3.37–3.41 eV were obtained. Results on the crystallinity, surface morphology, roughness, bonding vibration, absorption, photoluminescence, and resistivity of the laser-irradiated films were analyzed and discussed.
The authors are grateful to the Malaysian Government for providing the financial support through FRGS vote 4F815 in this project. Thanks to RMC and UTM for monitoring the research progress and fund managements and the performance of the project. Thanks are also extended to the Higher Education and Scientific Research, University of Al-Qadisiyah, Faculty of Education, Physics Department of Iraq, for providing PhD study leave.
- 5.Y. Segawa, A. Ohtomo, M. Kawasaki, H. Koinuma, Z. Tang, P. Yu, G. Wong, Growth of ZnO thin film by laser MBE: lasing of exciton at room temperature. physica status solidi (b). 202(2), 669–672 (1997)Google Scholar