Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction
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Effects of the thickness of copper phthalocyanine (CuPc) film (2, 5, 10, 15, 20, 30 and 40 nm) on the surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction have been investigated. The optical band gap of CuPc film was increased with increase in the thickness of the CuPc film. The electrical properties of the Au/n-Si Schottky junction and Au/CuPc/n-Si heterojunctions were characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The barrier height, ideality factor and series resistance were estimated based on the I–V, Cheung’s and Norde’s methods. The barrier heights increased with increasing CuPc interlayer thickness up to 15 nm and remained constant for thickness above 20 nm, associated with the incapability of the generated carriers to reach the interface. The discrepancy in the barrier heights obtained from I–V and C–V measurements indicates the presence of barrier inhomogeneity at the interface as evidenced by higher ideality factor values. It can be concluded that the electrical properties of Au/n-Si Schottky junction can be significantly altered with the variation of CuPc thickness as interlayer.
This work was supported by the National Research Foundation of Korea (NRF) Grant (NRF-2017R1A2B2003365) funded by the Ministry of Education, Republic of Korea, and by a Grant from the R&D Program for Industrial Core Technology (Grant No. 10045216) funded by the Ministry of Trade, Industry and Energy, Republic of Korea.
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