Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes

  • Habibe Uslu Tecimer
  • M. A. Alper
  • H. Tecimer
  • S. O. Tan
  • Ş. Altındal
Original Paper


Schottky barrier diodes (SBDs) have been fabricated with pure and zinc (Zn) doped organic interfacial layer of polyvinyl alcohol (PVA) to form Au/PVA/n-GaAs and Au/PVA(Zn-doped)/n-GaAs structures. The electrical characterization of these SBDs have also been made using their current–voltage (IV) characteristics data on both forward and reverse biases at room temperature. The main electrical parameters, such as ideality factor (n), barrier height (ΦBo), series resistance (Rs) and the voltage dependence resistance (Ri) have also been extracted from the IV data to compare the Zn-doped and undoped polymer interfacial layer SBDs. The rectifying ratio values of Au/PVA/n-GaAs and Au/PVA(Zn-doped)/n-GaAs SBDs have been obtained as 105 and 107, respectively, at (± 2 V). Consequently, the comparison of the polymer interfacial layer SBDs indicates that the Zn-doped SBDs have given better results than the undoped SBDs when considering the main electrical parameters at room temperature.


Nanocomposite Schottky diode Polymer Interfacial Layer PVA 



We thank Prof. İbrahim USLU, PhD, Department of Chemistry Education, Gazi University, for his advices, support and guidance during our study.


  1. 1.
    Sze SM (1981) Physics of semiconductor devices, 2nd edn. Willey, New York, pp 1–24Google Scholar
  2. 2.
    Park JB, Kim JH, Hwang DH (2016) Fluorene-based conjugated polymer as an interfacial layer for organic photovoltaic cells. Polym Bull 73:2393. Scholar
  3. 3.
    Demirezen S, Kaya A, Altındal Ş, Uslu İ (2017) The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature. Polym Bull 74:3765. Scholar
  4. 4.
    Tan SO, Uslu Tecimer H, Çiçek O, Tecimer H, Orak İ, Altındal Ş (2016) Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities. J Mater Sci Mater Electron. Scholar
  5. 5.
    Gökçen M, Yıldırım M, Demir A, Allı A, Allı S, Hazer B (2014) UV illumination effects on electrical characteristics of metal–polymer–semiconductor diodes fabricated with new poly(propylene glycol)-b-polystyrene block copolymer. Compos Part B Eng. Scholar
  6. 6.
    Aksoy Ö, Uzun İ, Topal G, Ocak YS, Çelik Ö, Batibay D (2017) Synthesis, characterization, and Schottky diode applications of low-cost new chitin derivatives. Polym Bull. Scholar
  7. 7.
    Rajagopal Reddy V, Umapathi A, Sankar Naik S (2013) Influence of annealing on electrical properties of an organic thin layer-based n-type InP schottky barrier diode. J Electron Mater. Scholar
  8. 8.
    Çiçek O, Uslu Tecimer H, Tan SO, Tecimer H, Altındal Ş, Uslu I (2016) Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and Graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions. Compos Part B Eng. Scholar
  9. 9.
    Vijayakumar GNS, Devashankarb S, Rathnakumarib M, Sureshkumar P (2010) Synthesis of electrospun ZnO/CuO nanocomposite fibers and their dielectric and non-linear optic studies. J Alloys Compd 507(1):225–229CrossRefGoogle Scholar
  10. 10.
    Tan SO, Tecimer HU, Çiçek O, Tecimer H, Altındal Ş (2017) Frequency dependent CV and G/ωV characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes. J Mater Sci Mater Electron. Scholar
  11. 11.
    Mahendia S, Goyal PK, Tomar AK, Chahal RP, Kumar S (2016) Study of dielectric behavior and charge conduction mechanism of poly(vinyl alcohol) (PVA)-copper (Cu) and Gold (Au) nanocomposites as a bio-resorbable material for organic electronics. J Electron Mater. Scholar
  12. 12.
    Son DI, Yang HY, Kim TW, Park WI (2015) Compos Part B Eng 69:154CrossRefGoogle Scholar
  13. 13.
    Tan SO, Tecimer HU, Çiçek O (2017) Frequency-dependent admittance analysis of the metal–semiconductor structure with an ınterlayer of Zn-doped organic polymer nanocomposites. IEEE Trans Electron Devices. Scholar
  14. 14.
    Zhang D, Sun D, Wen Q, Wen T, Kolodzey J, Zhang H (2016) Tuning the optical modulation of wideband terahertz waves by the gate voltage of graphene field effect transistors. Compos Part B Eng. Scholar
  15. 15.
    Demirezen S, Özavcı E, Altındal Ş (2014) The effect of frequency and temperature on capacitance/conductance–voltage (C/G–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs). Mater Sci Semicond Proc 23:1–6CrossRefGoogle Scholar
  16. 16.
    Biber M, Türüt A (2002) The Cu/n-GaAs Schottky barrier diodes prepared by anodization process. J Electron Mater. Scholar
  17. 17.
    Tuan TTA, Kuo DH, Li CC, Yen WC (2014) Schottky barrier characteristics of Pt contacts to all sputtering-made n-type GaN and MOS diodes. J Mater Sci Mater Electron. Scholar
  18. 18.
    Tecimer H, Türüt A, Uslu H, Altındal S, Uslu İ (2013) Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs). Sens Actuators A Phys. Scholar
  19. 19.
    Werner J, Guttler H (1991) Barrier inhomogeneities at Schottky contacts. J Appl Phys. Scholar
  20. 20.
    Çiçek O, Uslu Tecimer H, Tan SO, Tecimer H, Orak İ, Altındal Ş (2017) Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures. Compos Part B Eng. Scholar
  21. 21.
    Lee C, Seo J, Kim H, Song D-IK, Kim Y (2016) Stable low-voltage organic memory transistors with poly(vinyl alcohol) layers stabilized by vinyl silicon oxide interlayers. Org Electron. Scholar
  22. 22.
    Wang S, Ahmad Z, Mark JE (1993) A polyamide–silica composite prepared by the sol–gel process. Polym Bull 31:323. Scholar
  23. 23.
    Tunç T, Altındal Ş, Dökme İ, Uslu H (2011) Anomalous peak in the forward-bias CV plot and temperature-dependent behavior of Au/PVA (Ni, Zn-doped)/n-Si(111) structures. J Electron Mater. Scholar
  24. 24.
    Ferdowsi P, Mokhtari (2015) Fabrication and characterization of electrospun PVA/CdS and PVA/TiO2 nanocomposite thin films as n-type semiconductors. J Polym Bull 72:2363. Scholar
  25. 25.
    Reddy ChVS, Han X, Zhu Q-Y, Mai L-Q, Chen W (2006) Dielectric spectroscopy studies on (PVP + PVA) polyblend film. Microelectron Eng. Scholar
  26. 26.
    Jha JK, Ortiz RS, Du J, Shepherd ND (2014) Semiconductor to metal transition in degenerate ZnO: Al films and the impact on its carrier scattering mechanisms and bandgap for OLED applications. J Mater Sci Mater Electron. Scholar
  27. 27.
    Abdolmaleki A, Mallakpour S, Borandeh S (2012) Effect of silane-modified ZnO on morphology and properties of bionanocomposites based on poly(ester-amide) containing tyrosine linkages. Polym Bull 69:15. Scholar
  28. 28.
    Towe ED, Zamerowski TJ (1982) Properties of Zn-doped P-type In0.53Ga0.47as grown by vapor phase epitaxy (VPE) on InP substrates. J Electron Mater. Scholar
  29. 29.
    Aboelfotoh MO (1991) On Schottky barrier inhomogeneities at silicide/silicon interfaces. J Appl Phys. Scholar
  30. 30.
    Tataroğlu A, Altındal Ş (2008) Analysis of interface states and series resistance of MIS Schottky diodes using the current–voltage (IV) characteristics. Microelectron Eng. Scholar
  31. 31.
    Werner JH (1988) Schottky barrier and pn-junction I/V plots—small signal evaluation. Appl Phys A. Scholar
  32. 32.
    Chattopadhyay P (1994) Effect of localized states on the current–voltage characteristics of metal–semiconductor contacts with thin interfacial layer. Solid State Electron. Scholar
  33. 33.
    Rhoderick EH, Williams RH (1988) Metal–semiconductor contacts, 2nd edn. Clarendon, OxfordGoogle Scholar
  34. 34.
    Cheung SK, Cheung NW (1986) Extraction of Schottky diode parameters from forward current–voltage characteristics. Appl Phys Lett. Scholar
  35. 35.
    Norde H (1979) A modified forward IV plot for Schottky diodes with high series resistance. J Appl Phys. Scholar
  36. 36.
    Bohlin KE (1986) Generalized Norde plot including determination of the ideality factor. J Appl Phys. Scholar

Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Habibe Uslu Tecimer
    • 1
  • M. A. Alper
    • 1
  • H. Tecimer
    • 2
  • S. O. Tan
    • 3
  • Ş. Altındal
    • 4
  1. 1.Department of Electrical and Electronic Engineering, Faculty of EngineeringKarabük UniversityKarabükTurkey
  2. 2.Department of Mechatronics Engineering, Faculty of TechnologyKarabük UniversityKarabükTurkey
  3. 3.Department of Electronics and Automation, TOBB Technical Sciences Vocational SchoolKarabük UniversityKarabükTurkey
  4. 4.Physics Department, Faculty of SciencesGazi UniversityAnkaraTurkey

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