Advertisement

Fresenius' Journal of Analytical Chemistry

, Volume 365, Issue 8, pp 636–641 | Cite as

Quantitative investigation of boron incorporation in polycrystalline CVD diamond films by SIMS

  • T. Kolber
  • K. Piplits
  • R. Haubner
  • H. Hutter
Original paper

Abstract

Polycrystalline diamond films have been produced on pre-treated silicon substrate by CVD hot filament method, with B(C2H5)3 added to the gas phase. However, under identical surface conditions, boron incorporation is not homogeneous. In {111} growth sectors, the boron concentration is found to be about 5 times higher than in {100} growth sectors. Moreover, a marked increase in contaminating elements such as aluminium and sodium in regions with higher boron concentrations is detected. Under SIMS fine focus conditions it can be shown that the interface between these two different facet regions is smaller than 0.5 μm. With 3D-depth profile images it can also be shown that the carbon distribution in the diamond layer is not totally homogeneous.

Keywords

Boron Diamond Film Boron Concentration Polycrystalline Diamond Growth Sector 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Springer-Verlag Berlin Heidelberg 1999

Authors and Affiliations

  • T. Kolber
    • 1
  • K. Piplits
    • 1
  • R. Haubner
    • 2
  • H. Hutter
    • 1
  1. 1.Institute of Analytical Chemistry, University of Technology Vienna, Getreidemarkt 9/151, A-1060 Vienna, AustriaAT
  2. 2.Institute of Chemical Technology of Inorganic Materials, University of Technology Vienna, Getreidemarkt 9/161, A-1060 Vienna, AustriaAT

Personalised recommendations