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Journal of Materials Science

, Volume 24, Issue 4, pp 1383–1388 | Cite as

Effects of composition and thickness on the electrical properties of indium oxide/tin oxide multilayered films

  • Takeyuki Suzuki
  • Tsutomu Yamazaki
  • Harunobu Oda
Papers

Abstract

Indium oxide/tin oxide multilayered films with a 2 nm pair thickness were deposited on glass substrates at temperatures lower than 100° C by an ion-beam sputtering method. The structure, electrical properties and visible transmissivity were investigated as a function of composition and the total thickness on as-deposited and annealed films. X-ray diffraction analysis showed that the as-deposited 200 nm thick film (with 0.15 nm tin oxide layers) was partially crystalline and films thinner than 100 nm were amorphous or microcrystalline. The roomtemperature resistivity of as-prepared films increased with the increase of an average tin oxide layer thickness from ∼0.05 to ∼0.3 nm (ideal monolayer thickness) under a constant total thickness ∼100 nm. We observed a decrease of the Hall mobility with the increase of the total film thickness from 10 to 200 nm in as-deposited samples containing 0.15 nm tin oxide layers.

Keywords

Thick Film Total Thickness Hall Mobility Annealed Film Oxide Layer Thickness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd. 1989

Authors and Affiliations

  • Takeyuki Suzuki
    • 1
  • Tsutomu Yamazaki
    • 1
  • Harunobu Oda
    • 1
  1. 1.Department of Industrial Chemistry, Faculty of TechnologyTokyo University of Agriculture and TechnologyTokyoJapan

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